RM24C128C-LSNI-T

Product Overview

Category

RM24C128C-LSNI-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The data stored in RM24C128C-LSNI-T is retained even when power is removed.
• High capacity: This device has a storage capacity of 128 kilobits (16 kilobytes).
• Low power consumption: RM24C128C-LSNI-T operates on low power, making it suitable for battery-powered devices.
• Fast access time: It offers quick read and write operations, ensuring efficient data handling.
• Reliable: The memory cells are designed to withstand multiple read and write cycles without degradation.

Package

RM24C128C-LSNI-T is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in a compact form factor.

Packaging/Quantity

RM24C128C-LSNI-T is typically sold in reels containing a specified quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Capacity: 128 kilobits (16 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Supply Voltage: 1.7V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 200 years
• Write Endurance: 1 million write cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. SDA: Serial data input/output for I2C communication
3. SCL: Serial clock input for I2C communication
4. WP: Write protect pin (optional)
5. GND: Ground

Functional Features

• Random access: Allows reading and writing of data at any memory location.
• Page write mode: Enables simultaneous programming of multiple bytes in a single operation, improving efficiency.
• Write protection: The optional write protect pin can be used to prevent accidental modification of stored data.
• Software write protection: Certain memory areas can be protected by software commands, enhancing data security.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Low power consumption extends battery life in portable devices.
• Fast access time enables quick data retrieval and updates.
• Reliable performance with high endurance and long data retention period.

Disadvantages

• Limited storage capacity compared to other memory technologies like NAND flash.
• Slower write speed compared to volatile memory types like SRAM.
• Higher cost per bit compared to some other memory options.

Working Principles

RM24C128C-LSNI-T utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data using floating-gate transistors that can be electrically programmed and erased. The I2C interface allows for easy communication with the device, enabling read and write operations.

Detailed Application Field Plans

RM24C128C-LSNI-T finds applications in various fields, including: 1. Industrial automation: Used for storing configuration data, calibration values, and event logs in industrial control systems. 2. Automotive electronics: Employed for storing vehicle settings, sensor data, and firmware updates in automotive electronic control units. 3. Smart home devices: Utilized for storing user preferences, device settings, and operational data in smart home automation systems. 4. Medical devices: Used for storing patient data, device settings, and firmware updates in medical equipment.

Detailed and Complete Alternative Models

1. RM24C256C-LSNI-T: A higher capacity variant with 256 kilobits (32 kilobytes) of storage.
2. RM24C64C-LSNI-T: A lower capacity variant with 64 kilobits (8 kilobytes) of storage.
3. RM24C512C-LSNI-T: An even higher capacity variant with 512 kilobits (64 kilobytes) of storage.

These alternative models offer different storage capacities to suit specific application requirements.

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