AS4C128M16D2-25BCNTR

Product Overview

Category: Integrated Circuit (IC)

Use: Memory module for electronic devices

Characteristics: - High-speed and high-density memory - Low power consumption - Reliable performance - Compact size

Package: BGA (Ball Grid Array)

Essence: AS4C128M16D2-25BCNTR is a memory chip designed to store and retrieve data in electronic devices.

Packaging/Quantity: The AS4C128M16D2-25BCNTR is typically sold in reels containing a specific quantity of chips, usually 250 or 500 units per reel.

Specifications

• Part Number: AS4C128M16D2-25BCNTR
• Memory Type: SDRAM (Synchronous Dynamic Random Access Memory)
• Organization: 128 Megabit x 16
• Operating Voltage: 2.5V
• Speed Grade: -25
• Package Type: BGA
• Pin Count: 60
• Refresh Mode: Auto Refresh and Self Refresh
• Data Rate: 200 MHz
• Burst Length: 2, 4, 8
• CAS Latency: 2, 3
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AS4C128M16D2-25BCNTR has a total of 60 pins. Here is the detailed pin configuration:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VDDQ
20. VSSQ
21. A0
22. A1
23. A2
24. A3
25. A4
26. A5
27. A6
28. A7
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. BA0
38. BA1
39. RAS#
40. CAS#
41. WE#
42. CKE
43. CS#
44. DM0
45. DM1
46. DQS0
47. DQS1
48. DQSN0
49. DQSN1
50. ODT0
51. ODT1
52. VREF
53. VREFDQ
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

• High-speed data transfer with a maximum data rate of 200 MHz
• Auto Refresh and Self Refresh modes for efficient memory management
• Low power consumption, making it suitable for battery-powered devices
• Reliable performance with error correction capabilities
• Compact size allows for integration into various electronic devices

Advantages and Disadvantages

Advantages: - High-speed and high-density memory capacity - Low power consumption - Reliable performance even in demanding applications - Compact size for easy integration

Disadvantages: - Limited storage capacity compared to other memory technologies - Sensitive to electrical noise and voltage fluctuations - Higher cost compared to some alternative memory options

Working Principles

The AS4C128M16D2-25BCNTR operates based on the principles of Synchronous Dynamic Random Access Memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into rows and columns, allowing for efficient access and retrieval of data.

During operation, the memory controller sends commands to the AS4C128M16D2-25BCNTR to read or write data. The data is transferred in synchronization with the clock signal, ensuring reliable and accurate data transfer. The memory module also supports auto-refresh and self-refresh modes to maintain data integrity and prevent data loss.

Detailed Application Field Plans

The AS4C128M16D2-25BCNTR is widely used in various electronic devices that require high-speed and high-density memory. Some common application fields include:

1. Personal Computers (PCs) and Laptops: Used as main memory modules to store and retrieve data during computer operations.
2. Servers and Data Centers: Provides fast and reliable memory for handling large