AS4C128M8D3LB-12BIN

Product Overview

Category

AS4C128M8D3LB-12BIN belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a memory component in various electronic devices such as computers, laptops, servers, and embedded systems.

Characteristics

• Type: DRAM module
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 128M words x 8 bits x 8 banks
• Speed: 12ns (nanoseconds)
• Voltage: 3.3V
• Package: LBGA (Low-Profile Ball Grid Array)
• Pin Count: 60 pins
• Operating Temperature Range: -40°C to +85°C

Packaging/Quantity

The AS4C128M8D3LB-12BIN is typically packaged in trays or reels. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

Electrical Specifications

• Supply Voltage: 3.3V ± 0.3V
• Input High Voltage (VIH): 2.0V min
• Input Low Voltage (VIL): 0.8V max
• Output High Voltage (VOH): 2.4V min
• Output Low Voltage (VOL): 0.4V max
• Operating Current (IDD): 55mA (typical)

Timing Specifications

• Access Time (tAC): 12ns (max)
• Cycle Time (tRC): 60ns (min)
• Refresh Period (tREF): 64ms (min)
• Precharge Time (tRP): 15ns (min)
• Active Command Time (tRAS): 42ns (min)
• Row Address Setup Time (tRCD): 15ns (min)
• Row Address Hold Time (tRCH): 0ns (min)

Detailed Pin Configuration

The AS4C128M8D3LB-12BIN module has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. A8
21. A9
22. A10
23. A11
24. A12
25. A13
26. A14
27. A15
28. A16
29. A17
30. A18
31. A19
32. A20
33. A21
34. A22
35. A23
36. A24
37. A25
38. A26
39. A27
40. A28
41. A29
42. A30
43. A31
44. WE#
45. CAS#
46. RAS#
47. CKE
48. CS#
49. BA0
50. BA1
51. DM0
52. DM1
53. VSS
54. CLK
55. NC
56. NC
57. VCC
58. VCC
59. VSS
60. VSS

Functional Features

• High-speed data transfer and access
• Low power consumption
• Easy integration into various electronic systems
• Reliable performance and stability

Advantages

• Large memory capacity for data storage
• Fast access time for efficient data retrieval
• Low power consumption for energy efficiency
• Compact package size for space-saving designs

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability in terms of capacity expansion

Working Principles

The AS4C128M8D3LB-12BIN operates based on the principles of dynamic random-access memory. It stores data in a matrix of capacitors, where each capacitor represents a memory cell. The stored data is periodically refreshed to maintain its integrity. When accessed, the memory controller activates the appropriate row and column addresses to read or write data.

Detailed Application Field Plans

The AS4C128M8D3LB-12BIN can be used in various applications, including: - Personal computers - Laptops and notebooks - Servers and workstations - Networking equipment - Industrial automation systems - Medical devices - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to AS4C128M8D3LB-12BIN include: