AS4C4M32S-6TIN

Product Overview

Category

AS4C4M32S-6TIN belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact size

Package

AS4C4M32S-6TIN is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of AS4C4M32S-6TIN lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of AS4C4M32S-6TIN units.

Specifications

• Model: AS4C4M32S-6TIN
• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 4 Meg x 32
• Speed: 6 nanoseconds (ns)
• Operating Voltage: 3.3 volts (V)
• Interface: Parallel
• Package Type: Thin Small Outline Package (TSOP)
• Pin Count: 86

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. DQ16
19. DQ17
20. DQ18
21. DQ19
22. DQ20
23. DQ21
24. DQ22
25. DQ23
26. DQ24
27. DQ25
28. DQ26
29. DQ27
30. DQ28
31. DQ29
32. DQ30
33. DQ31
34. A0
35. A1
36. A2
37. A3
38. A4
39. A5
40. A6
41. A7
42. A8
43. A9
44. A10
45. A11
46. A12
47. A13
48. A14
49. A15
50. A16
51. A17
52. A18
53. A19
54. A20
55. A21
56. A22
57. A23
58. A24
59. A25
60. A26
61. A27
62. A28
63. A29
64. A30
65. A31
66. /CAS
67. /RAS
68. /WE
69. /CS0
70. /CS1
71. /CS2
72. /CS3
73. /CS4
74. /CS5
75. /CS6
76. /CS7
77. /CKE
78. /CLK
79. /DQM0
80. /DQM1
81. /DQM2
82. /DQM3
83. VSS
84. VSS
85. VSS
86. VDDQ

Functional Features

• High-speed data transfer
• Random access capability
• Burst mode operation
• Auto-refresh and self-refresh modes

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact size

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance (number of read/write cycles)

Working Principles

AS4C4M32S-6TIN operates based on the principles of synchronous dynamic random access memory. It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The memory cells are organized into rows and columns, allowing for efficient data retrieval through address decoding.

Detailed Application Field Plans

AS4C4M32S-6TIN finds applications in various electronic devices, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

1. AS4C4M32S-7TIN
2. AS4C4M32S-8TIN