AS4C512M8D3-12BAN

Product Overview

Category

AS4C512M8D3-12BAN belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and accessing data quickly and efficiently.

Characteristics

• High-speed data access
• Volatile memory
• Requires constant refreshing
• Large storage capacity
• Compact size

Package

AS4C512M8D3-12BAN is packaged as a small module with pins for easy integration into circuit boards.

Essence

The essence of AS4C512M8D3-12BAN lies in its ability to provide fast and reliable data storage and retrieval in electronic devices.

Packaging/Quantity

AS4C512M8D3-12BAN is typically sold in bulk packaging, with quantities varying depending on the manufacturer and customer requirements.

Specifications

• Model: AS4C512M8D3-12BAN
• Type: Dynamic RAM (DRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Speed: 12 nanoseconds (NS)
• Organization: 512M x 8 bits
• Voltage: 3.3V
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• Package Type: Small Outline Dual In-Line Memory Module (SO-DIMM)

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. VSS
21. A8
22. A9
23. A10
24. A11
25. A12
26. A13
27. A14
28. A15
29. WE#
30. CAS#
31. RAS#
32. CKE
33. CS#
34. BA0
35. BA1
36. VSS
37. DQM0
38. DQM1
39. VDD

Functional Features

• High-speed data access: AS4C512M8D3-12BAN provides fast read and write operations, allowing for efficient data processing.
• Low power consumption: This module is designed to minimize power usage, making it suitable for battery-powered devices.
• Error correction: AS4C512M8D3-12BAN incorporates error correction techniques to ensure data integrity.
• Compatibility: It is compatible with various computer systems and electronic devices.

Advantages and Disadvantages

Advantages

• Fast data access speeds
• Large storage capacity
• Low power consumption
• Error correction capabilities
• Compatibility with different systems

Disadvantages

• Volatile memory (data loss upon power loss)
• Requires constant refreshing
• Relatively higher cost compared to other memory technologies

Working Principles

AS4C512M8D3-12BAN operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. When a read or write operation is initiated, the memory controller sends signals to the appropriate pins, enabling data transfer between the module and the device's processor.

Detailed Application Field Plans

AS4C512M8D3-12BAN finds applications in various fields, including: 1. Personal computers and laptops 2. Servers and data centers 3. Mobile devices such as smartphones and tablets 4. Networking equipment 5. Automotive electronics 6. Industrial control systems

Detailed and Complete Alternative Models

1. AS4C512M8D3-12BCN
2. AS4C512M8D3-12BIN
3. AS4C512M8D3-12BEN
4. AS4C512M8D3-12BIN-T
5. AS4C512M8D3-12BEN-T

These alternative models offer similar specifications and functionality to AS4C512M8D3-12BAN, providing options for different customer requirements.

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