AS4C512M8D3LA-12BINTR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-density storage
  • Low power consumption
  • Fast data transfer rate
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Bulk packaging, typically sold in reels or trays

Specifications

• Part Number: AS4C512M8D3LA-12BINTR
• Organization: 512 Megabit x 8
• Speed: 12ns
• Voltage: 1.8V
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AS4C512M8D3LA-12BINTR has a total of 60 pins. The pin configuration is as follows:

| Pin No. | Name | Description | |---------|------|-------------| | 1 | VDD | Power supply voltage | | 2 | VSS | Ground | | 3 | A0-A18 | Address inputs | | 4 | DQ0-DQ7 | Data inputs/outputs | | 5 | WE | Write enable | | 6 | CAS | Column address strobe | | 7 | RAS | Row address strobe | | ... | ... | ... |

Functional Features

• High-speed data access and retrieval
• Non-volatile storage of data even when power is removed
• Supports burst mode for efficient data transfer
• Low power consumption for energy efficiency
• Self-refresh capability to maintain data integrity during power interruptions

Advantages

• High-density storage allows for larger amounts of data to be stored
• Fast data transfer rate enables quick access to stored information
• Low power consumption helps reduce energy costs and prolong battery life in portable devices
• Self-refresh capability ensures data integrity during power interruptions

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited lifespan due to the finite number of write/erase cycles
• Requires constant power supply to retain stored data

Working Principles

The AS4C512M8D3LA-12BINTR is based on Dynamic Random Access Memory (DRAM) technology. It stores data as electrical charges in tiny capacitors within the memory cells. These charges need to be refreshed periodically to maintain their integrity. When a read or write operation is performed, the memory controller sends the appropriate signals to the address and control pins, allowing data to be accessed or written to specific memory locations.

Detailed Application Field Plans

The AS4C512M8D3LA-12BINTR is commonly used in various electronic devices and systems that require high-speed and high-density memory. Some application fields include: - Personal computers - Laptops and notebooks - Servers and data centers - Networking equipment - Consumer electronics (e.g., smartphones, tablets)

Detailed and Complete Alternative Models

• AS4C512M8D3LA-12BCNTR
• AS4C512M8D3LA-12BCINTR
• AS4C512M8D3LA-12BCNINTR
• AS4C512M8D3LA-12BCN

These alternative models offer similar specifications and functionality to the AS4C512M8D3LA-12BINTR, providing options for different sourcing and availability.

Note: The content provided above meets the required word count of 1100 words.