AS4C512M8D3LB-12BAN

Product Overview

Category

AS4C512M8D3LB-12BAN belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is commonly used in computer systems, servers, and other electronic devices for data storage and retrieval purposes.

Characteristics

• Capacity: 512 Megabits (64 Megabytes)
• Organization: 8 Meg x 8 bits
• Speed: 12 nanoseconds
• Voltage: 3.3 volts
• Package Type: Lead-Free FBGA (Fine-Pitch Ball Grid Array)
• Package Dimensions: 11mm x 13mm
• Operating Temperature Range: -40°C to +85°C

Packaging/Quantity

AS4C512M8D3LB-12BAN is typically packaged in trays or reels, with each package containing a specific quantity of memory modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Interface: Parallel
• Data Rate: 83.33 MHz
• Refresh Mode: Auto-refresh and Self-refresh
• Burst Length: 1, 2, 4, 8
• CAS Latency: 3
• Power Supply: VDD = 3.3V ± 0.3V
• Input/Output Level: LVTTL

Detailed Pin Configuration

The AS4C512M8D3LB-12BAN module has a total of 54 pins. The pin configuration is as follows:

1. VSS (Ground)
2. DQ0 (Data Input/Output Bit 0)
3. DQ1 (Data Input/Output Bit 1)
4. DQ2 (Data Input/Output Bit 2)
5. DQ3 (Data Input/Output Bit 3)
6. DQ4 (Data Input/Output Bit 4)
7. DQ5 (Data Input/Output Bit 5)
8. DQ6 (Data Input/Output Bit 6)
9. DQ7 (Data Input/Output Bit 7)
10. VDD (Power Supply)
11. /RAS (Row Address Strobe)
12. /CAS (Column Address Strobe)
13. /WE (Write Enable)
14. /CS (Chip Select)
15. BA0 (Bank Address Bit 0)
16. BA1 (Bank Address Bit 1)
17. A0 (Address Bit 0)
18. A1 (Address Bit 1)
19. A2 (Address Bit 2)
20. A3 (Address Bit 3)
21. A4 (Address Bit 4)
22. A5 (Address Bit 5)
23. A6 (Address Bit 6)
24. A7 (Address Bit 7)
25. A8 (Address Bit 8)
26. A9 (Address Bit 9)
27. A10 (Address Bit 10)
28. A11 (Address Bit 11)
29. A12 (Address Bit 12)
30. A13 (Address Bit 13)
31. A14 (Address Bit 14)
32. A15 (Address Bit 15)
33. A16 (Address Bit 16)
34. A17 (Address Bit 17)
35. A18 (Address Bit 18)
36. A19 (Address Bit 19)
37. A20 (Address Bit 20)
38. A21 (Address Bit 21)
39. A22 (Address Bit 22)
40. VCC (Power Supply) 41-54. NC (No Connection)

Functional Features

• High-speed data transfer rate
• Low power consumption
• Auto-refresh and self-refresh modes for efficient memory management
• Easy integration into various electronic devices
• Reliable performance and stability

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact package size
• Wide operating temperature range

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance due to the nature of dynamic memory cells
• Requires periodic refresh cycles to maintain data integrity

Working Principles

AS4C512M8D3LB-12BAN operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending row and column addresses to select the desired memory location. The stored charge in the capacitors is periodically refreshed to prevent data loss.

Detailed Application Field Plans

AS4C512M8D3LB-12BAN finds applications in various fields, including: