AS4C64M16D3A-12BINTR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Tray packaging, quantity varies

Specifications

• Part Number: AS4C64M16D3A-12BINTR
• Organization: 64 Meg x 16
• Speed: 1200 MHz
• Voltage: 1.35V
• Operating Temperature Range: -40°C to +85°C
• Data Rate: DDR3L
• Interface: Parallel
• Refresh: Auto-refresh and self-refresh modes supported
• CAS Latency: 12

Detailed Pin Configuration

The AS4C64M16D3A-12BINTR has a total of 96 pins arranged in a specific configuration. The pinout includes address pins, data pins, control pins, and power supply pins. For the detailed pin configuration diagram, please refer to the datasheet provided by the manufacturer.

Functional Features

• High-speed data transfer: The AS4C64M16D3A-12BINTR operates at a speed of 1200 MHz, allowing for fast and efficient data transfer.
• Large storage capacity: With an organization of 64 Meg x 16, this memory module offers a large storage capacity for storing data.
• Low power consumption: The module operates at a voltage of 1.35V, resulting in lower power consumption compared to higher voltage alternatives.
• Auto-refresh and self-refresh modes: The AS4C64M16D3A-12BINTR supports auto-refresh and self-refresh modes, ensuring data integrity and reliability.

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data access. - Large storage capacity accommodates a significant amount of data. - Low power consumption reduces energy usage. - Auto-refresh and self-refresh modes enhance data integrity.

Disadvantages: - Limited compatibility: The AS4C64M16D3A-12BINTR is designed for specific applications and may not be compatible with all systems. - Higher cost: Compared to lower-capacity memory modules, the AS4C64M16D3A-12BINTR may have a higher price due to its larger storage capacity.

Working Principles

The AS4C64M16D3A-12BINTR is based on the working principle of dynamic random access memory (DRAM). It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. When data is read or written, the memory controller sends signals to the appropriate pins, allowing for data transfer between the module and the system.

Detailed Application Field Plans

The AS4C64M16D3A-12BINTR is commonly used in various electronic devices and systems that require high-speed and large-capacity memory. Some application fields include: - Personal computers - Servers - Networking equipment - Industrial automation systems - Medical devices

Detailed and Complete Alternative Models

• AS4C64M16D3A-12BCNTR
• AS4C64M16D3A-12BCINTR
• AS4C64M16D3A-12BCN
• AS4C64M16D3A-12BCI
• AS4C64M16D3A-12BCN-T

Note: This list is not exhaustive, and there may be other alternative models available in the market.

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