AS4C64M16MD1-5BCNTR

Product Overview

Category

AS4C64M16MD1-5BCNTR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, tablets, and other digital devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Compact package size
• Reliable performance

Package

AS4C64M16MD1-5BCNTR is packaged in a small form factor integrated circuit (IC) package. The specific package type may vary depending on the manufacturer.

Essence

The essence of AS4C64M16MD1-5BCNTR lies in its ability to store and retrieve data quickly and efficiently, making it an essential component in modern electronic devices.

Packaging/Quantity

AS4C64M16MD1-5BCNTR is typically sold in reels or trays containing multiple units. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 64 Megabit x 16
• Operating Voltage: 3.3V
• Speed Grade: -5
• Package Type: Small Outline Integrated Circuit (SOIC)
• Pin Count: 48
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

AS4C64M16MD1-5BCNTR has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. /CKE
41. /DQM0
42. /DQM1
43. /DM
44. VSS
45. VSS
46. VSS
47. NC
48. VDD

Functional Features

• High-speed data access and transfer
• Auto-refresh and self-refresh modes for efficient power management
• Support for various memory operations such as read, write, and refresh
• Error correction capabilities to ensure data integrity
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for more data to be stored in a smaller space.
• Fast data access and transfer rates enable quick processing and improved system performance.
• Low power consumption helps prolong battery life in portable devices.
• Compact package size makes it suitable for space-constrained applications.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• DRAM chips are volatile memory, meaning they require constant power supply to retain data. Data is lost when power is disconnected.
• Relatively higher latency compared to other types of memory, which may impact overall system performance in certain applications.

Working Principles

AS4C64M16MD1-5BCNTR operates based on the principles of dynamic random access memory. It stores data as electrical charges in tiny capacitors within the memory cells. To read or write data, the memory controller sends appropriate signals to the chip's pins, activating specific rows and columns of memory cells.

During a read operation, the charge stored in the selected memory cell is sensed and amplified to retrieve the stored data. For a write operation, the memory controller applies the desired charge to the selected memory cell, altering its state.

To maintain data integrity, the memory cells need periodic refreshing. This is achieved through auto-refresh and self-refresh modes, where the memory controller automatically refreshes the data stored in the DRAM cells at regular intervals.

Detailed Application Field Plans

AS4C64M16MD1-5BCNTR finds extensive use in various electronic devices and systems, including:

1. Personal computers
2. Laptops and