AS4C64M32MD1-5BCN

Product Overview

Category

AS4C64M32MD1-5BCN belongs to the category of semiconductor memory products.

Use

It is primarily used as a high-density random access memory (RAM) module in various electronic devices and systems.

Characteristics

• High density: AS4C64M32MD1-5BCN offers a large storage capacity, allowing for efficient data storage and retrieval.
• Fast access time: The module provides quick access to stored data, ensuring smooth and responsive performance.
• Low power consumption: AS4C64M32MD1-5BCN is designed to operate with minimal power requirements, making it energy-efficient.
• Reliable operation: It offers reliable data retention and endurance, ensuring the integrity of stored information.
• Wide temperature range: The module can function reliably across a broad temperature spectrum, making it suitable for various environments.

Package and Quantity

AS4C64M32MD1-5BCN is available in a compact and standardized package. Each package contains one unit of the memory module.

Specifications

• Model: AS4C64M32MD1-5BCN
• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Capacity: 64 Megabytes (MB)
• Organization: 32M words x 16 bits
• Operating Voltage: 3.3 Volts (V)
• Speed Grade: -5
• Package Type: Ball Grid Array (BGA)
• Pin Count: 90 pins

Detailed Pin Configuration

The pin configuration of AS4C64M32MD1-5BCN is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | VDDQ | Power supply voltage for input/output buffers | | 3 | DQ0 | Data input/output bit 0 | | 4 | DQ1 | Data input/output bit 1 | | ... | ... | ... | | 90 | VSS | Ground |

Functional Features

• High-speed data transfer: AS4C64M32MD1-5BCN supports fast data transfer rates, facilitating efficient communication between the memory module and the host system.
• Burst mode operation: It allows for consecutive data access, reducing latency and improving overall performance.
• Auto-refresh capability: The module automatically refreshes stored data, ensuring data integrity over time.
• On-die termination (ODT): ODT helps to minimize signal reflections and improve signal quality during high-speed data transfers.

Advantages

• Large storage capacity enables handling of extensive data requirements.
• Fast access time ensures quick retrieval of information.
• Low power consumption contributes to energy efficiency.
• Reliable operation ensures data integrity and system stability.
• Wide temperature range allows for versatile usage in various environments.

Disadvantages

• Limited compatibility with older systems that do not support SDRAM technology.
• Higher cost compared to lower-capacity memory modules.

Working Principles

AS4C64M32MD1-5BCN operates based on synchronous dynamic random access memory (SDRAM) technology. It stores data in a matrix of capacitors, which are organized into rows and columns. The memory controller sends commands and addresses to access specific data stored in the memory cells. The data is read or written by activating the appropriate row and column addresses.

Detailed Application Field Plans

AS4C64M32MD1-5BCN finds applications in various electronic devices and systems, including: - Personal computers and laptops - Servers and data centers - Networking equipment - Embedded systems - Consumer electronics (e.g., digital cameras, gaming consoles)

Detailed and Complete Alternative Models

• AS4C64M32MD1-5BCN is part of a family of memory modules offered by the manufacturer. Other alternative models within the same series include:
  • AS4C64M32MD1-5BIN
  • AS4C64M32MD1-5BKN
  • AS4C64M32MD1-5BCN-T

These alternative models provide similar functionality and characteristics, with slight variations in package type or pin configuration.

In conclusion, AS4C64M32MD1-5BCN is a high-density SDRAM module that offers fast access times, low power consumption, and reliable operation. It finds applications in various electronic devices and systems, providing efficient data storage and retrieval capabilities.