AS4C8M16D1-5BCNTR

Product Overview

Category

AS4C8M16D1-5BCNTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a high-density memory solution in various electronic devices such as computers, servers, and networking equipment.

Characteristics

• High density: AS4C8M16D1-5BCNTR offers a large storage capacity, allowing for efficient data storage and retrieval.
• Fast access speed: It provides quick access to stored data, ensuring smooth and responsive performance.
• Low power consumption: The module is designed to consume minimal power, making it energy-efficient.
• Compact package: AS4C8M16D1-5BCNTR comes in a compact form factor, enabling easy integration into different systems.
• Reliable performance: It offers reliable and stable operation, ensuring data integrity.

Package and Quantity

AS4C8M16D1-5BCNTR is typically packaged in a small outline dual in-line memory module (SODIMM) format. The quantity may vary depending on the specific requirements of the application.

Essence

The essence of AS4C8M16D1-5BCNTR lies in its ability to provide high-density, fast, and reliable memory storage for electronic devices, enhancing their overall performance.

Specifications

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Organization: 8 Meg x 16
• Speed: 5 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Synchronous DRAM (SDRAM)
• Operating Temperature: -40°C to +85°C
• Package Type: Small Outline Dual In-Line Memory Module (SODIMM)

Detailed Pin Configuration

The pin configuration of AS4C8M16D1-5BCNTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. /CAS
39. /RAS
40. /WE
41. /CS
42. VCC
43. VCCQ
44. VSS

Functional Features

• High-speed data transfer: AS4C8M16D1-5BCNTR allows for fast and efficient data transfer between the memory module and the processor.
• Refresh mechanism: It incorporates a refresh mechanism to maintain the stored data integrity over time.
• Error correction: The module may include error correction capabilities to detect and correct memory errors, ensuring data accuracy.
• Compatibility: AS4C8M16D1-5BCNTR is designed to be compatible with various system architectures and interfaces.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access speed
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Relatively higher cost compared to other memory options
• Limited compatibility with older system architectures

Working Principles

AS4C8M16D1-5BCNTR operates based on the principles of dynamic random-access memory. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. The module communicates with the processor through a synchronous interface, allowing for efficient data transfer.

Detailed Application Field Plans

AS4C8M16D1-5BCNTR finds applications in various fields, including: 1. Personal computers and laptops 2. Servers and data centers 3. Networking equipment 4. Embedded systems 5. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to AS4C8M16D1-5BCNTR include: 1. AS4C8M16D1A-5BCNTR 2. AS4C8M16D1B-5BCNTR 3. AS4C8M16D1C-