AS4C8M16S-6BINTR

Product Overview

Category

AS4C8M16S-6BINTR belongs to the category of semiconductor memory products.

Use

It is primarily used as a random access memory (RAM) module in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation: AS4C8M16S-6BINTR offers fast data access and retrieval, making it suitable for applications that require quick processing.
• Large storage capacity: With a capacity of 8 megabits (8M), this memory module can store a significant amount of data.
• Low power consumption: AS4C8M16S-6BINTR is designed to operate efficiently with minimal power consumption.
• Reliable performance: It provides stable and reliable performance, ensuring data integrity and system stability.

Package

AS4C8M16S-6BINTR is available in a compact and standardized package, commonly known as a dual in-line memory module (DIMM). This package allows for easy installation and compatibility with various devices.

Essence

The essence of AS4C8M16S-6BINTR lies in its ability to provide high-speed and reliable data storage and retrieval, contributing to the overall performance and functionality of electronic devices.

Packaging/Quantity

AS4C8M16S-6BINTR is typically packaged individually or in sets, depending on the manufacturer's specifications. The quantity may vary, but it is commonly available in single units or multiples of ten.

Specifications

• Model: AS4C8M16S-6BINTR
• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 8M x 16 bits
• Speed: 6ns (nanoseconds)
• Voltage: 3.3V
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• Package Type: Dual In-Line Memory Module (DIMM)
• Pin Count: 168

Detailed Pin Configuration

The pin configuration of AS4C8M16S-6BINTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. A24
45. A25
46. A26
47. A27
48. A28
49. A29
50. A30
51. A31
52. BA0
53. BA1
54. RAS#
55. CAS#
56. WE#
57. CS#
58. CKE
59. CLK
60. DQM0
61. DQM1
62. VCC
63. VSS
64. NC 65-168. NC

Functional Features

AS4C8M16S-6BINTR offers the following functional features:

1. High-speed data access: It provides fast read and write operations, enabling efficient data processing.
2. Burst mode support: AS4C8M16S-6BINTR supports burst mode, allowing for consecutive data transfers without the need for repeated address input.
3. Auto-refresh capability: It has an auto-refresh feature that ensures the integrity of stored data by periodically refreshing the memory cells.
4. Power-saving modes: The module includes power-saving modes to reduce energy consumption during idle periods.
5. Error correction: AS4C8M16S-6BINTR incorporates error correction techniques to detect and correct data errors, enhancing data reliability.

Advantages and Disadvantages

Advantages

• High-speed operation improves overall system performance.
• Large storage capacity accommodates a significant amount of data.
• Low power consumption contributes to energy efficiency.
• Reliable performance ensures data integrity and system stability.
• Compact package allows for easy installation and compatibility.

Disadvantages