AS4C8M32MSA-6BINTR

Product Overview

Category

AS4C8M32MSA-6BINTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a high-speed volatile storage component in electronic devices such as computers, servers, and networking equipment.

Characteristics

• High-speed operation
• Large storage capacity
• Volatile memory
• Synchronous interface
• Low power consumption

Package

AS4C8M32MSA-6BINTR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of AS4C8M32MSA-6BINTR lies in its ability to provide fast and efficient data storage and retrieval for various computing applications.

Packaging/Quantity

AS4C8M32MSA-6BINTR is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Part Number: AS4C8M32MSA-6BINTR
• Memory Type: DDR3 SDRAM
• Organization: 8M words x 32 bits
• Speed Grade: 6
• Operating Voltage: 1.5V
• Interface: Synchronous
• Package Type: SODIMM
• Pin Count: 204

Detailed Pin Configuration

The pin configuration of AS4C8M32MSA-6BINTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. DQ16
21. DQ17
22. DQ18
23. DQ19
24. DQ20
25. DQ21
26. DQ22
27. DQ23
28. VSS
29. DQ24
30. DQ25
31. DQ26
32. DQ27
33. DQ28
34. DQ29
35. DQ30
36. DQ31
37. VSS
38. A0
39. A1
40. A2
41. A3
42. A4
43. A5
44. A6
45. A7
46. VSS
47. A8
48. A9
49. A10
50. A11
51. A12
52. A13
53. A14
54. A15
55. VSS
56. BA0
57. BA1
58. RAS#
59. CAS#
60. WE#
61. CS#
62. DM0
63. DM1
64. VSS
65. VREF
66. CK0
67. CK#0
68. CKE0
69. ODT0
70. VSS
71. VDD
72. VDDSPD

Functional Features

• High-speed data transfer
• Random access capability
• Refresh mechanism for maintaining data integrity
• Error correction code (ECC) support for data reliability
• Auto-precharge and self-refresh modes for power-saving

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable data integrity with ECC support
• Compact form factor for space-constrained applications

Disadvantages

• Volatile memory, requiring constant power supply to retain data
• Relatively higher cost compared to other memory technologies
• Limited lifespan due to finite write/erase cycles

Working Principles

AS4C8M32MSA-6BINTR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which need to be periodically refreshed to maintain their charge. When a read or write operation is performed, the memory controller accesses the specific memory address and transfers data through the synchronous interface.

Detailed Application Field Plans

AS4C8M32MSA-6BINTR finds extensive application in various computing devices, including: - Laptops and notebooks - Desktop computers - Servers - Networking equipment - Embedded systems

Detailed and Complete Alternative Models

Some alternative models to AS4C8M32MSA-6BINTR include: - AS4C8M32MD1-5BCN - MT41K256M