AS6C1016-55ZIN

Product Overview

Category

AS6C1016-55ZIN belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Compact size

Package

AS6C1016-55ZIN comes in a small outline integrated circuit (SOIC) package.

Essence

The essence of AS6C1016-55ZIN lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

AS6C1016-55ZIN is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips.

Specifications

• Organization: 1M x 16 bits
• Operating Voltage: 2.7V - 3.6V
• Access Time: 55ns
• Standby Current: 10μA (typical)
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

AS6C1016-55ZIN has a total of 44 pins, which are assigned specific functions. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE: Chip Enable
6. VCC: Power Supply
7. GND: Ground

Functional Features

• Random access to any memory location
• Byte-wise and page-wise write operations
• Automatic sleep mode for power saving
• Built-in error correction code (ECC) for data integrity

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access
• Low power consumption prolongs battery life in portable devices
• Non-volatile storage ensures data retention even during power loss
• Compact size enables integration into space-constrained designs

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per bit compared to some alternatives
• Susceptible to radiation-induced errors in certain environments

Working Principles

AS6C1016-55ZIN utilizes a combination of electronic circuits and semiconductor materials to store and retrieve digital information. It employs a matrix of memory cells, with each cell capable of storing one bit of data. The memory cells are organized in rows and columns, and the address inputs control the selection of specific cells for read or write operations. The data is stored as electrical charges within the memory cells, and these charges are manipulated by various control signals to perform read and write operations.

Detailed Application Field Plans

AS6C1016-55ZIN finds applications in various fields, including: 1. Personal computers 2. Laptops and notebooks 3. Mobile phones and tablets 4. Automotive electronics 5. Industrial automation systems 6. Medical devices 7. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AS6C1016-55ZIN include: 1. MT48LC16M16A2P-75: 16Mb SDRAM 2. AT28C16-15PU: 16K EEPROM 3. M25P16-VMN6TPB: 16Mb Serial Flash Memory 4. CY62157EV30LL-45BVXI: 16Mb SRAM 5. IS61LV25616AL-10TLI: 256K x 16 High-Speed CMOS Static RAM

These alternative models can be considered based on specific requirements and compatibility with the target system.

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