AS6C8016-55BIN

Product Overview

Category

AS6C8016-55BIN belongs to the category of semiconductor memory chips.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Compact package size

Package

AS6C8016-55BIN is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of AS6C8016-55BIN lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

AS6C8016-55BIN is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 8 Megabits (1 Megabyte)
• Operating Voltage: 5V
• Access Time: 55 nanoseconds
• Organization: 512K words x 16 bits
• Data Retention: More than 10 years

Detailed Pin Configuration

AS6C8016-55BIN has a total of 44 pins. The pin configuration is as follows:

1. Vcc
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. /WE
27. /OE
28. /CE1
29. /CE2
30. /CE3
31. /CE4
32. /CE5
33. /CE6
34. /CE7
35. /CE8
36. /CE9
37. /CE10
38. /CE11
39. /CE12
40. /CE13
41. /CE14
42. /CE15
43. GND
44. NC

Functional Features

• High-speed random access
• Low power consumption in standby mode
• Easy interfacing with other digital circuits
• Non-volatile storage of data
• Reliable operation in harsh environmental conditions

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval
• Low power consumption helps conserve energy
• Non-volatile storage ensures data retention even during power loss
• Compact package size enables integration into space-constrained devices

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to some alternative memory options

Working Principles

AS6C8016-55BIN operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain their state as long as power is supplied. The stored data can be accessed randomly, allowing for fast read and write operations.

Detailed Application Field Plans

AS6C8016-55BIN finds applications in various electronic devices and systems, including: - Personal computers - Servers - Networking equipment - Industrial control systems - Automotive electronics - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to AS6C8016-55BIN include: - AS6C8016-55BINR - AS6C8016-55BING - AS6C8016-55BINH - AS6C8016-55BINJ

These alternative models offer similar specifications and functionality, providing options for different application requirements.

Word count: 511