BLF2425M6L180P,112

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of radio frequency signals in communication systems - Characteristics: High power output, high efficiency, and wide frequency range - Package: SMD (Surface Mount Device) - Essence: Provides high-power amplification for RF signals - Packaging/Quantity: Typically packaged in reels of 1000 units

Specifications: - Frequency Range: 2400-2500 MHz - Output Power: 25W - Gain: 18 dB - Package Type: M6L (Plastic, 6-lead, large flange)

Detailed Pin Configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: Vcc (Power Supply) - Pin 5: Not Connected - Pin 6: Thermal Pad

Functional Features: - High linearity and efficiency - Wide operating voltage range - Excellent thermal stability

Advantages: - High power output - Wide frequency range - Compact SMD package

Disadvantages: - Sensitivity to improper handling during assembly - Higher cost compared to lower power transistors

Working Principles: The BLF2425M6L180P,112 operates on the principle of amplifying RF signals using a combination of active and passive components within its internal circuitry. When a low-power RF signal is applied to the input pin, the transistor amplifies it to a higher power level at the output pin.

Detailed Application Field Plans: - Wireless communication systems - Radar systems - Satellite communication equipment - Microwave links

Detailed and Complete Alternative Models: - BLF2425M6L180P,111 - BLF2425M6L180P,113 - BLF2425M6L180P,114

This product belongs to the category of RF power transistors and is primarily used for amplifying radio frequency signals in various communication systems. Its key characteristics include high power output, high efficiency, and a wide frequency range. The transistor is packaged in a surface mount device format and is typically supplied in reels of 1000 units. With a frequency range of 2400-2500 MHz, an output power of 25W, and a gain of 18 dB, this transistor offers high performance in RF signal amplification. Its functional features include high linearity and efficiency, along with excellent thermal stability. While it provides advantages such as high power output and a compact package, it may be sensitive to improper handling during assembly and can have a higher cost compared to lower power transistors. The working principle involves the amplification of RF signals through internal circuitry. Its applications span across wireless communication systems, radar systems, satellite communication equipment, and microwave links. Additionally, alternative models such as BLF2425M6L180P,111, BLF2425M6L180P,113, and BLF2425M6L180P,114 offer similar functionality and can serve as substitutes in various applications.