Category: RF Power Transistor
Use: Amplification of radio frequency signals
Characteristics: High power, high efficiency, broadband capability
Package: Surface mount
Essence: High-performance RF power transistor
Packaging/Quantity: Tape and reel, 100 units per reel
Advantages: - High power output - High efficiency - Broadband capability
Disadvantages: - Higher cost compared to lower power transistors - Requires careful thermal management due to high power output
The BLF2425M9LS140U operates on the principle of amplifying radio frequency signals using a combination of high power and high efficiency to deliver strong, clean signals across a broad frequency range.
This RF power transistor is ideal for use in: - Radar systems - Wireless communication equipment - Satellite communication systems - Industrial, scientific, and medical (ISM) applications
BLF2425M7LS140U
BLF2425M11LS140U
In conclusion, the BLF2425M9LS140U is a high-performance RF power transistor designed for amplifying radio frequency signals with high power, efficiency, and broadband capability. Its surface mount package and detailed specifications make it suitable for a wide range of RF applications.
What is the maximum operating temperature of BLF2425M9LS140U?
What is the typical power gain of BLF2425M9LS140U at 2.45 GHz?
What is the input and output impedance of BLF2425M9LS140U?
What is the recommended supply voltage for BLF2425M9LS140U?
What is the typical efficiency of BLF2425M9LS140U at 2.45 GHz?
What is the maximum output power of BLF2425M9LS140U at 2.45 GHz?
Does BLF2425M9LS140U require external matching networks?
What is the typical input return loss of BLF2425M9LS140U at 2.45 GHz?
Is BLF2425M9LS140U suitable for Wi-Fi and Bluetooth applications?
What is the package type of BLF2425M9LS140U?