BLF6G27-100,118

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: RF Power Amplification - Characteristics: High power, high efficiency - Package: SOT539A - Essence: Gallium Nitride (GaN) technology - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 2400-2500 MHz - Output Power: 100W - Gain: 17.5 dB - Efficiency: 55% - Voltage: 32V - Current: 14A

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected - Pin 5: Not connected

Functional Features: - High power density - Broadband performance - High gain - Excellent thermal stability

Advantages and Disadvantages: - Advantages: - High power output - Wide frequency range - Compact package - Disadvantages: - Higher cost compared to traditional transistors - Sensitive to electrostatic discharge

Working Principles: The BLF6G27-100,118 operates on the principle of amplifying radio frequency signals using GaN technology. When a signal is applied to the gate terminal, the transistor allows a larger current to flow from the drain to the source, effectively amplifying the input signal.

Detailed Application Field Plans: - Telecommunications: Used in base station amplifiers for wireless communication systems. - Radar Systems: Employed in radar transmitters for military and civilian applications. - Industrial Heating: Utilized in RF heating systems for industrial processes.

Detailed and Complete Alternative Models: - NXP BLF6G22LS-100P - Infineon PTVA121501EA V1

This comprehensive entry provides an in-depth understanding of the BLF6G27-100,118 RF Power Transistor, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.