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BLF7G20L-200,112
Product Overview
Category
The BLF7G20L-200,112 belongs to the category of RF power transistors.
Use
It is used in high-frequency applications such as radio frequency (RF) amplifiers and transmitters.
Characteristics
- High power handling capability
- Broadband operation
- High efficiency
- Low distortion
Package
The BLF7G20L-200,112 is typically available in a compact and rugged package suitable for high-power RF applications.
Essence
This product is essential for achieving high-power amplification in RF systems.
Packaging/Quantity
The BLF7G20L-200,112 is usually packaged individually and is available in various quantities depending on the supplier.
Specifications
- Frequency Range: 0.1 - 2.5 GHz
- Output Power: 20W
- Gain: 13 dB
- Efficiency: >55%
- Package Type: SOT539A
Detailed Pin Configuration
The BLF7G20L-200,112 typically features a pin configuration with specific connections for gate, drain, and source terminals. The detailed pinout can be found in the product datasheet.
Functional Features
- High power handling capacity
- Wide frequency range coverage
- High linearity
- Excellent thermal stability
Advantages
- High power output
- Wide operating frequency range
- Suitable for broadband applications
- Good thermal performance
Disadvantages
- Higher cost compared to lower power alternatives
- Requires careful matching and biasing for optimal performance
Working Principles
The BLF7G20L-200,112 operates based on the principles of RF power amplification using field-effect transistor (FET) technology. It amplifies input RF signals to deliver high-power output with minimal distortion.
Detailed Application Field Plans
The BLF7G20L-200,112 is commonly used in: - Cellular base stations - Radar systems - Broadcast transmitters - RF heating applications
Detailed and Complete Alternative Models
Some alternative models to BLF7G20L-200,112 include: - BLF888A - MRF13750H - MRFE6VP61K25H
In conclusion, the BLF7G20L-200,112 is a high-performance RF power transistor designed for demanding high-power RF applications. Its wide frequency range, high power output, and excellent linearity make it a preferred choice for various RF amplification needs.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací BLF7G20L-200,112 v technických řešeních
What is the maximum power dissipation of BLF7G20L-200,112?
- The maximum power dissipation of BLF7G20L-200,112 is 200W.
What is the typical gain of BLF7G20L-200,112?
- The typical gain of BLF7G20L-200,112 is 20dB.
What is the operating frequency range of BLF7G20L-200,112?
- The operating frequency range of BLF7G20L-200,112 is from 470MHz to 860MHz.
What is the input and output impedance of BLF7G20L-200,112?
- The input and output impedance of BLF7G20L-200,112 is 50 ohms.
What is the typical efficiency of BLF7G20L-200,112?
- The typical efficiency of BLF7G20L-200,112 is around 30%.
What are the recommended bias conditions for BLF7G20L-200,112?
- The recommended bias conditions for BLF7G20L-200,112 are Vdd = 28V and Idq = 1500mA.
What are the typical applications for BLF7G20L-200,112?
- BLF7G20L-200,112 is commonly used in UHF television transmitters and other high-power RF amplification applications.
What are the thermal resistance values for BLF7G20L-200,112?
- The thermal resistance values for BLF7G20L-200,112 are Rth(j-c) = 0.5°C/W and Rth(j-a) = 25°C/W.
What are the recommended storage and operating temperature ranges for BLF7G20L-200,112?
- The recommended storage temperature range for BLF7G20L-200,112 is from -65°C to 150°C, and the operating temperature range is from 25°C to 100°C.
What are the key differences between BLF7G20L-200,112 and its predecessor models?
- BLF7G20L-200,112 offers higher power dissipation, improved efficiency, and wider operating frequency range compared to its predecessor models.