Viz Specifikace pro podrobnosti o produktu.
BLF888B,112
Product Overview
Category
The BLF888B,112 belongs to the category of RF power transistors.
Use
It is used for high-power amplification in radio frequency (RF) applications.
Characteristics
- High power handling capability
- Broadband frequency coverage
- High efficiency
- Reliable performance
Package
The BLF888B,112 is typically available in a metal-ceramic package for enhanced thermal management and durability.
Essence
The essence of BLF888B,112 lies in its ability to deliver high-power RF amplification with efficiency and reliability.
Packaging/Quantity
The transistor is usually packaged individually and is available in various quantities based on customer requirements.
Specifications
- Frequency Range: 470 - 860 MHz
- Output Power: 600 W
- Gain: 18 dB
- Efficiency: 30%
- Voltage: 32 V
- Current: 35 A
Detailed Pin Configuration
The BLF888B,112 features a detailed pin configuration with specific connections for gate, drain, and source terminals. It is essential to refer to the datasheet for the exact pinout details.
Functional Features
- High power output
- Wide frequency coverage
- Excellent linearity
- Thermal stability
Advantages
- Suitable for high-power RF applications
- Broadband frequency capability
- Robust construction for reliable operation
- High efficiency leading to reduced power consumption
Disadvantages
- Higher cost compared to lower power transistors
- Requires careful thermal management due to high power dissipation
Working Principles
The BLF888B,112 operates based on the principles of RF amplification using field-effect transistor (FET) technology. It utilizes input signals to control the flow of current between the source and drain terminals, resulting in amplified RF output.
Detailed Application Field Plans
The BLF888B,112 is commonly used in: - Broadcast transmitters - Radar systems - Wireless communication infrastructure - RF plasma generators
Detailed and Complete Alternative Models
Some alternative models to BLF888B,112 include: - BLF888A,112 - BLF888C,112 - BLF888D,112
These alternatives offer similar RF power capabilities with slight variations in specifications and performance characteristics.
In conclusion, the BLF888B,112 is a high-power RF transistor designed for demanding applications that require efficient and reliable amplification. Its wide frequency coverage and robust construction make it a preferred choice for various RF systems.
[Word Count: 345]
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací BLF888B,112 v technických řešeních
What is the maximum power output of BLF888B,112?
- The maximum power output of BLF888B,112 is 1500 watts.
What is the operating frequency range of BLF888B,112?
- The operating frequency range of BLF888B,112 is from 470 to 860 MHz.
What is the typical gain of BLF888B,112?
- The typical gain of BLF888B,112 is around 18 dB.
What are the typical applications for BLF888B,112?
- BLF888B,112 is commonly used in high-power broadcast transmitters and digital TV transmitters.
What is the recommended supply voltage for BLF888B,112?
- The recommended supply voltage for BLF888B,112 is 50 volts.
Does BLF888B,112 require external matching networks?
- Yes, BLF888B,112 requires external matching networks for optimal performance.
What is the typical efficiency of BLF888B,112?
- The typical efficiency of BLF888B,112 is around 30%.
Is BLF888B,112 suitable for continuous wave (CW) operation?
- Yes, BLF888B,112 is suitable for continuous wave (CW) operation.
What thermal management considerations should be taken into account when using BLF888B,112?
- Adequate heat sinking and thermal management are crucial due to the high power levels involved.
Are there any specific precautions or guidelines for handling BLF888B,112 during installation?
- Proper grounding, RF shielding, and adherence to manufacturer's installation guidelines are essential for safe and reliable operation.