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ATF-33143-TR1G
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ATF-33143-TR1G

Product Overview

Category

ATF-33143-TR1G belongs to the category of low noise enhancement mode Pseudomorphic High Electron Mobility Transistor (pHEMT).

Use

It is commonly used as a high-frequency, high-gain amplifier in various electronic applications.

Characteristics

  • Low noise figure
  • High gain
  • Wide frequency range

Package

The ATF-33143-TR1G is typically available in a surface-mount SOT-343 package.

Essence

This product is essential for amplifying weak signals in high-frequency communication systems and radar applications.

Packaging/Quantity

The ATF-33143-TR1G is usually packaged in reels containing 3000 units.

Specifications

  • Frequency Range: 100 MHz to 6 GHz
  • Noise Figure: 0.3 dB at 2 GHz
  • Gain: 13 dB at 2 GHz
  • Input Power: 20 dBm
  • Supply Voltage: 3 V
  • Package Type: SOT-343

Detailed Pin Configuration

The ATF-33143-TR1G has four pins arranged in a specific configuration: 1. Gate (G) 2. Drain (D) 3. Source (S) 4. Ground (GND)

Functional Features

  • Low noise figure for improved signal-to-noise ratio
  • High gain for amplification of weak signals
  • Wide frequency range for versatile applications

Advantages

  • Excellent noise performance
  • High gain capability
  • Broadband frequency coverage

Disadvantages

  • Higher power consumption compared to some alternative models
  • Sensitive to static discharge due to its high-frequency operation

Working Principles

The ATF-33143-TR1G operates based on the principles of Pseudomorphic High Electron Mobility Transistors, utilizing a heterojunction structure to achieve low noise and high gain characteristics.

Detailed Application Field Plans

The ATF-33143-TR1G is widely used in: - Wireless communication systems - Radar systems - Microwave point-to-point links - Test and measurement equipment

Detailed and Complete Alternative Models

Some alternative models to ATF-33143-TR1G include: - MGA-86576 from Avago Technologies - BGA2817 from Infineon Technologies - TQP3M9009 from Qorvo

In conclusion, ATF-33143-TR1G is a crucial component in high-frequency electronic systems, offering low noise, high gain, and wide frequency coverage. Its application spans across various industries, making it an indispensable part of modern communication and radar technologies.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací ATF-33143-TR1G v technických řešeních

  1. What is ATF-33143-TR1G?

    • ATF-33143-TR1G is a low noise enhancement mode Pseudomorphic HEMT in a surface mount plastic package.

  2. What are the typical applications of ATF-33143-TR1G?

    • Typical applications include cellular infrastructure, satellite communication, and other high-performance RF applications.

  3. What is the operating frequency range of ATF-33143-TR1G?

    • The operating frequency range is typically from 100 MHz to 4000 MHz.

  4. What is the typical gain of ATF-33143-TR1G?

    • The typical gain is around 13 dB at 2 GHz.

  5. What is the noise figure of ATF-33143-TR1G?

    • The noise figure is typically around 0.35 dB at 2 GHz.

  6. What is the recommended bias voltage for ATF-33143-TR1G?

    • The recommended bias voltage is typically 3V.

  7. What are the key features of ATF-33143-TR1G?

    • Key features include high linearity, low noise, and high gain performance.

  8. What are the thermal characteristics of ATF-33143-TR1G?

    • The device is designed to operate over a wide temperature range, typically from -40°C to 85°C.

  9. What are the packaging options available for ATF-33143-TR1G?

    • ATF-33143-TR1G is available in a surface mount plastic package.

  10. Are there any application notes or reference designs available for ATF-33143-TR1G?

    • Yes, application notes and reference designs are available to assist with the implementation of ATF-33143-TR1G in technical solutions.