HSMS-2855-TR2G

Introduction

HSMS-2855-TR2G is a high-frequency surface mount Schottky diode designed for various electronic applications. This entry provides an overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Components
• Use: HSMS-2855-TR2G is used as a high-frequency mixer or detector in wireless communication systems, microwave radio, and other RF applications.
• Characteristics: This diode offers low series resistance, low forward voltage, and fast switching capabilities, making it suitable for high-frequency applications.
• Package: The HSMS-2855-TR2G is available in a surface mount SOT-23 package.
• Essence: Its essence lies in providing reliable and efficient high-frequency signal processing.
• Packaging/Quantity: The diode is typically packaged in reels with a quantity varying based on customer requirements.

Specifications

• Forward Voltage: 0.5V (typical)
• Reverse Voltage: 15V
• Maximum DC Current: 1mA
• Operating Frequency: Up to 10GHz
• Storage Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The HSMS-2855-TR2G has three pins: Anode, Cathode, and No Connection (NC). The pinout configuration is as follows: - Anode (A) - Pin 1 - Cathode (K) - Pin 2 - No Connection (NC) - Pin 3

Functional Features

• High-Frequency Operation: Capable of operating at frequencies up to 10GHz.
• Low Forward Voltage: Provides efficient signal processing with a low forward voltage of 0.5V.
• Fast Switching: Enables rapid signal switching in high-frequency applications.

Advantages and Disadvantages

Advantages

• High-frequency operation capability
• Low forward voltage
• Fast switching speed
• Compact SOT-23 package

Disadvantages

• Limited reverse voltage tolerance (15V)
• Low maximum DC current (1mA)

Working Principles

The HSMS-2855-TR2G operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for fast switching and low forward voltage characteristics. When a forward bias is applied, the diode conducts quickly, making it suitable for high-frequency applications.

Detailed Application Field Plans

The diode finds extensive use in the following applications: - Wireless communication systems - Microwave radio - RF signal detection and mixing - High-frequency signal rectification

Detailed and Complete Alternative Models

Some alternative models to HSMS-2855-TR2G include: - HSMS-285C-TR1G - HSMS-2860-TR1G - HSMS-286B-TR1G - HSMS-286C-TR1G

These alternatives offer similar high-frequency performance and are also available in surface mount packages.

In conclusion, the HSMS-2855-TR2G is a versatile high-frequency Schottky diode with excellent characteristics suitable for various RF applications.

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