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2N3819 PBFREE
Product Overview
Category
The 2N3819 PBFREE is a field-effect transistor (FET) belonging to the category of electronic components.
Use
It is commonly used in electronic circuits for amplification and switching purposes.
Characteristics
- Low noise figure
- High input impedance
- Suitable for high-frequency applications
Package
The 2N3819 PBFREE is typically available in TO-92 packaging.
Essence
This FET is essential for designing low-noise, high-frequency amplifier circuits.
Packaging/Quantity
It is usually supplied in reels or tubes containing multiple units per package.
Specifications
- Maximum Drain-Source Voltage: 25V
- Maximum Gate-Source Voltage: -25V
- Continuous Drain Current: 100mA
- Power Dissipation: 350mW
- Operating Temperature Range: -55°C to +150°C
Detailed Pin Configuration
The 2N3819 PBFREE has three pins: 1. Drain (D) 2. Gate (G) 3. Source (S)
Functional Features
- High input impedance allows for easy interfacing with other circuit components.
- Low noise figure makes it suitable for low-noise amplifier designs.
- Can be used in both analog and digital applications.
Advantages and Disadvantages
Advantages
- Low noise figure
- High input impedance
- Suitable for high-frequency applications
Disadvantages
- Limited maximum drain-source voltage
- Relatively low continuous drain current rating
Working Principles
The 2N3819 PBFREE operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The 2N3819 PBFREE is widely used in the following applications: - Radio frequency (RF) amplifiers - Oscillator circuits - Signal processing circuits - Low-noise preamplifiers
Detailed and Complete Alternative Models
Some alternative models to the 2N3819 PBFREE include: - J310 - MPF102 - BF245
In conclusion, the 2N3819 PBFREE is a versatile field-effect transistor with characteristics that make it suitable for various high-frequency electronic applications, particularly those requiring low-noise amplification.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2N3819 PBFREE v technických řešeních
What is the 2N3819 PBFREE transistor used for?
- The 2N3819 PBFREE transistor is commonly used for high-frequency amplifier and oscillator applications.
What are the key features of the 2N3819 PBFREE transistor?
- The 2N3819 PBFREE transistor features low noise, high gain, and excellent high-frequency performance.
What is the maximum power dissipation of the 2N3819 PBFREE transistor?
- The maximum power dissipation of the 2N3819 PBFREE transistor is typically around 350 mW.
What are the typical operating frequencies for the 2N3819 PBFREE transistor?
- The 2N3819 PBFREE transistor can operate at frequencies ranging from audio to microwave frequencies.
What are the recommended operating conditions for the 2N3819 PBFREE transistor?
- The recommended operating conditions include a maximum drain-source voltage of 25V and a maximum drain current of 100mA.
Can the 2N3819 PBFREE transistor be used in RF amplifier circuits?
- Yes, the 2N3819 PBFREE transistor is well-suited for RF amplifier circuits due to its high-frequency performance.
What are some common applications of the 2N3819 PBFREE transistor?
- Common applications include RF amplifiers, oscillators, mixers, and other high-frequency circuit designs.
Does the 2N3819 PBFREE transistor require special handling due to its PBFREE designation?
- The PBFREE designation indicates that the transistor is free of lead (Pb) in its construction, so standard lead-free handling practices should be followed.
What are the typical gain characteristics of the 2N3819 PBFREE transistor?
- The 2N3819 PBFREE transistor exhibits high gain, typically ranging from 40 to 200 at higher frequencies.
Are there any known limitations or considerations when using the 2N3819 PBFREE transistor in technical solutions?
- It's important to consider the voltage and current requirements of the specific application, as well as the frequency range and potential stability issues at higher frequencies.