Central Semiconductor Corp
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2N5179
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2N5179 Transistor

Product Overview

The 2N5179 is a high-frequency NPN bipolar junction transistor (BJT) primarily used for amplification and switching applications. It falls under the category of discrete semiconductor devices and is known for its high frequency and low noise characteristics. The transistor is typically packaged in a TO-39 metal can package and is available in various quantities.

Basic Information

  • Category: Discrete Semiconductor Device
  • Use: Amplification and Switching
  • Characteristics: High Frequency, Low Noise
  • Package: TO-39 Metal Can
  • Packaging/Quantity: Various Quantities Available

Specifications

The 2N5179 transistor has the following specifications: - Maximum Collector-Base Voltage: 45V - Maximum Collector-Emitter Voltage: 45V - Maximum Emitter-Base Voltage: 4V - Maximum Collector Current: 50mA - Power Dissipation: 300mW - Transition Frequency: 800MHz - Noise Figure: 3dB

Detailed Pin Configuration

The 2N5179 transistor has three pins: 1. Collector (C): This pin is connected to the positive supply voltage. 2. Base (B): The input terminal for controlling the transistor's operation. 3. Emitter (E): This pin is connected to the ground or common reference point.

Functional Features

The 2N5179 transistor offers the following functional features: - High frequency capability suitable for RF applications - Low noise performance ideal for signal amplification - Good linearity for accurate signal reproduction

Advantages and Disadvantages

Advantages

  • High frequency capability
  • Low noise performance
  • Good linearity

Disadvantages

  • Limited maximum collector current
  • Relatively low power dissipation rating

Working Principles

The 2N5179 operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals. This allows the transistor to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The 2N5179 transistor finds application in various fields, including: - Radio Frequency (RF) amplifiers - Oscillators - Signal processing circuits - Communication systems

Detailed and Complete Alternative Models

Some alternative models to the 2N5179 transistor include: - 2N5109 - 2N2219 - 2N2222 - 2N3904 - BC547

In conclusion, the 2N5179 transistor is a versatile component with high frequency and low noise characteristics, making it suitable for a wide range of amplification and switching applications in electronic circuits.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 2N5179 v technických řešeních

  1. What is the 2N5179 transistor used for?

    • The 2N5179 is a high-frequency NPN transistor commonly used in RF and microwave applications.

  2. What are the key specifications of the 2N5179 transistor?

    • The 2N5179 has a maximum collector current of 50mA, a maximum power dissipation of 300mW, and a transition frequency of 800MHz.

  3. Can the 2N5179 be used as an amplifier?

    • Yes, the 2N5179 is often used as a high-frequency amplifier due to its performance at RF and microwave frequencies.

  4. How do I bias the 2N5179 transistor?

    • The 2N5179 can be biased using appropriate DC biasing circuits to ensure proper operation in the desired application.

  5. What are some common applications of the 2N5179 transistor?

    • Common applications include RF amplifiers, oscillators, mixers, and other high-frequency circuitry.

  6. What are the typical operating conditions for the 2N5179?

    • The 2N5179 is typically operated at frequencies ranging from HF to UHF and at moderate power levels.

  7. What are the recommended mounting and handling practices for the 2N5179?

    • The 2N5179 should be mounted on a suitable heat sink if operated at high power levels, and proper ESD precautions should be taken during handling.

  8. Can the 2N5179 be used in low-noise amplifier (LNA) designs?

    • Yes, the 2N5179's low noise figure makes it suitable for use in LNA designs in RF and microwave systems.

  9. What are the typical gain characteristics of the 2N5179?

    • The 2N5179 exhibits high gain at RF and microwave frequencies, making it suitable for signal amplification in these applications.

  10. Are there any common alternatives to the 2N5179 for similar applications?

    • Some common alternatives include the 2N5109 and MRF5179 transistors, which offer similar performance in high-frequency applications.