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CY7C1021CV26-15BAET

CY7C1021CV26-15BAET

Product Overview

Category

The CY7C1021CV26-15BAET belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic systems.

Characteristics

  • High-speed operation
  • Low power consumption
  • Non-volatile memory
  • Large storage capacity

Package

The CY7C1021CV26-15BAET is available in a compact and durable package, designed to protect the internal components from external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

The CY7C1021CV26-15BAET is typically packaged in trays or reels, with each package containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Model: CY7C1021CV26-15BAET
  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 1 Megabit x 1 bit
  • Operating Voltage: 3.3V
  • Access Time: 15 ns
  • Operating Temperature Range: -40°C to +85°C
  • Pin Count: 32

Detailed Pin Configuration

The CY7C1021CV26-15BAET has a total of 32 pins, each serving a specific function. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. OE#
  19. CE#
  20. WE#
  21. I/O0
  22. I/O1
  23. I/O2
  24. I/O3
  25. I/O4
  26. I/O5
  27. I/O6
  28. I/O7
  29. GND
  30. NC
  31. NC
  32. NC

Functional Features

  • High-speed data access
  • Low power consumption during standby mode
  • Easy integration into various electronic systems
  • Reliable data retention even in harsh environmental conditions

Advantages and Disadvantages

Advantages

  • Fast data access time
  • Low power consumption
  • Non-volatile memory
  • Large storage capacity

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited endurance compared to some non-volatile memory types

Working Principles

The CY7C1021CV26-15BAET operates based on the principles of static random access memory (SRAM). It utilizes a combination of flip-flops and logic gates to store and retrieve digital information. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

The CY7C1021CV26-15BAET finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Communication devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

  • CY7C1021CV33-10BAXI
  • CY7C1021CV33-10BGI
  • CY7C1021CV33-10BGXC
  • CY7C1021CV33-10BVXCT
  • CY7C1021CV33-10ZC

These alternative models offer similar functionality and specifications to the CY7C1021CV26-15BAET, providing options for different design requirements and compatibility considerations.

Note: The above information is subject to change. Please refer to the manufacturer's datasheet for the most up-to-date specifications and details.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací CY7C1021CV26-15BAET v technických řešeních

Sure! Here are 10 common questions and answers related to the application of CY7C1021CV26-15BAET in technical solutions:

Q1: What is the CY7C1021CV26-15BAET? A1: The CY7C1021CV26-15BAET is a specific model of synchronous SRAM (Static Random Access Memory) chip manufactured by Cypress Semiconductor.

Q2: What is the capacity of the CY7C1021CV26-15BAET? A2: The CY7C1021CV26-15BAET has a capacity of 1 megabit (128 kilobytes) organized as 131,072 words by 8 bits.

Q3: What does the "26-15" in the part number represent? A3: The "26-15" in the part number represents the access time of the SRAM. In this case, it indicates an access time of 26 nanoseconds.

Q4: What is the operating voltage range for the CY7C1021CV26-15BAET? A4: The operating voltage range for the CY7C1021CV26-15BAET is typically between 4.5V and 5.5V.

Q5: Can the CY7C1021CV26-15BAET be used in battery-powered devices? A5: Yes, the CY7C1021CV26-15BAET can be used in battery-powered devices as long as the operating voltage requirements are met.

Q6: What is the package type of the CY7C1021CV26-15BAET? A6: The CY7C1021CV26-15BAET comes in a 32-pin TSOP (Thin Small Outline Package).

Q7: Is the CY7C1021CV26-15BAET compatible with standard microcontrollers? A7: Yes, the CY7C1021CV26-15BAET is compatible with standard microcontrollers that support SRAM interfacing.

Q8: Can the CY7C1021CV26-15BAET be used in industrial applications? A8: Yes, the CY7C1021CV26-15BAET can be used in various industrial applications where reliable and fast memory access is required.

Q9: What are some typical applications of the CY7C1021CV26-15BAET? A9: Some typical applications of the CY7C1021CV26-15BAET include data buffering, cache memory, and general-purpose memory storage in embedded systems.

Q10: Are there any specific timing requirements for interfacing with the CY7C1021CV26-15BAET? A10: Yes, the CY7C1021CV26-15BAET has specific timing requirements for read and write operations, which should be followed as per the datasheet provided by Cypress Semiconductor.

Please note that these answers are based on general knowledge about SRAM chips and may not cover all possible details or specific use cases. It's always recommended to refer to the official datasheet and consult with technical experts for accurate information and application-specific guidance.