CY7C1061DV33-10BV1XI

Product Overview

Category

CY7C1061DV33-10BV1XI belongs to the category of high-speed synchronous static random access memory (SRAM) chips.

Use

This product is commonly used in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics

• High-speed operation: CY7C1061DV33-10BV1XI offers fast access times, making it suitable for applications that demand quick data processing.
• Low power consumption: This SRAM chip is designed to minimize power consumption, making it energy-efficient.
• Wide temperature range: It can operate reliably across a wide temperature range, making it suitable for use in different environments.
• High density: The CY7C1061DV33-10BV1XI has a high storage capacity, allowing it to store large amounts of data.

Package

The CY7C1061DV33-10BV1XI is available in a compact and industry-standard 44-pin TSOP-II package.

Essence

This SRAM chip is an essential component in electronic devices, providing temporary storage for data during processing.

Packaging/Quantity

The CY7C1061DV33-10BV1XI is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Organization: 64K words x 16 bits
• Voltage Supply: 3.3V
• Access Time: 10ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 5mA (max)
• Active Current: 70mA (max)

Detailed Pin Configuration

The CY7C1061DV33-10BV1XI has a total of 44 pins. Here is a detailed pin configuration:

1. A0-A15: Address Inputs
2. DQ0-DQ15: Data Input/Output
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB, LB: Byte Enables
7. VCC: Power Supply (3.3V)
8. GND: Ground

Functional Features

• Fast Read and Write Operations: The CY7C1061DV33-10BV1XI offers high-speed data access, enabling efficient read and write operations.
• Easy Integration: This SRAM chip can be easily integrated into various electronic systems due to its standard pin configuration and compatibility.
• Low Power Consumption: With its low power consumption design, the CY7C1061DV33-10BV1XI helps conserve energy in electronic devices.
• Reliable Performance: It provides reliable performance even in harsh operating conditions, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High-speed operation for quick data processing
• Low power consumption for energy efficiency
• Wide temperature range for versatile applications
• High storage capacity for large data requirements

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited availability in certain markets

Working Principles

The CY7C1061DV33-10BV1XI operates based on the synchronous static random access memory (SRAM) technology. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip uses an address bus to specify the location of data and a data bus to read from or write to the memory cells. The control signals such as write enable (WE), output enable (OE), and chip enables (CE1, CE2) facilitate the data transfer process.

Detailed Application Field Plans

The CY7C1061DV33-10BV1XI finds application in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Communication devices - Industrial automation systems - Automotive electronics

Detailed and Complete Alternative Models

1. CY7C1061DV33-10BAXI: Similar specifications, different package (48-pin TSOP-II)
2. CY7C1061DV33-10BGI: Similar specifications, different package (54-ball VFBGA)
3. CY7C1061DV33-10BGXI: Similar specifications, different package (54-ball VFBGA)

These alternative models offer similar functionality and performance, providing options for different system requirements.

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