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CY7C1250V18-333BZC

CY7C1250V18-333BZC

Product Overview

Category

The CY7C1250V18-333BZC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

  • High Performance: The CY7C1250V18-333BZC offers fast access times and high-speed data transfer rates, making it suitable for demanding applications.
  • Large Capacity: With a capacity of 1,250 megabits (Mb), this SRAM chip provides ample storage space for data-intensive tasks.
  • Low Power Consumption: Despite its high performance, the CY7C1250V18-333BZC is designed to operate efficiently with low power consumption.
  • Reliable Operation: This chip incorporates advanced error correction techniques and built-in self-test capabilities, ensuring data integrity and system reliability.

Package

The CY7C1250V18-333BZC is available in a compact and industry-standard BGA (Ball Grid Array) package. This package offers excellent thermal dissipation properties and facilitates easy integration into circuit boards.

Essence

The essence of the CY7C1250V18-333BZC lies in its ability to provide high-speed and reliable data storage, enabling efficient processing and execution of complex tasks in electronic devices.

Packaging/Quantity

This product is typically sold in reels or trays, depending on the manufacturer's packaging standards. The exact quantity per package may vary, but it is commonly available in quantities suitable for both small-scale and large-scale production.

Specifications

  • Memory Type: Synchronous SRAM
  • Capacity: 1,250 Mb
  • Access Time: 333 nanoseconds
  • Operating Voltage: 3.3 volts
  • Interface: Parallel
  • Package Type: BGA
  • Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The CY7C1250V18-333BZC features a specific pin configuration that facilitates its integration into electronic circuits. The detailed pin configuration is as follows:

  1. VDDQ: Power Supply (3.3V)
  2. DQ[0:17]: Data Input/Output Lines
  3. VSSQ: Ground
  4. DQ[18:35]: Data Input/Output Lines
  5. VDDQ: Power Supply (3.3V)
  6. DQ[36:53]: Data Input/Output Lines
  7. VSSQ: Ground
  8. DQ[54:71]: Data Input/Output Lines
  9. VDDQ: Power Supply (3.3V)
  10. DQ[72:89]: Data Input/Output Lines
  11. VSSQ: Ground
  12. DQ[90:107]: Data Input/Output Lines
  13. VDDQ: Power Supply (3.3V)
  14. DQ[108:125]: Data Input/Output Lines
  15. VSSQ: Ground
  16. DQ[126:143]: Data Input/Output Lines
  17. VDDQ: Power Supply (3.3V)
  18. DQ[144:161]: Data Input/Output Lines
  19. VSSQ: Ground
  20. DQ[162:179]: Data Input/Output Lines
  21. VDDQ: Power Supply (3.3V)
  22. DQ[180:197]: Data Input/Output Lines
  23. VSSQ: Ground
  24. DQ[198:215]: Data Input/Output Lines
  25. VDDQ: Power Supply (3.3V)
  26. DQ[216:233]: Data Input/Output Lines
  27. VSSQ: Ground
  28. DQ[234:251]: Data Input/Output Lines
  29. VDDQ: Power Supply (3.3V)
  30. DQ[252:269]: Data Input/Output Lines
  31. VSSQ: Ground
  32. DQ[270:287]: Data Input/Output Lines
  33. VDDQ: Power Supply (3.3V)
  34. DQ[288:305]: Data Input/Output Lines
  35. VSSQ: Ground
  36. DQ[306:323]: Data Input/Output Lines
  37. VDDQ: Power Supply (3.3V)
  38. DQ[324:341]: Data Input/Output Lines
  39. VSSQ: Ground
  40. DQ[342:359]: Data Input/Output Lines
  41. VDDQ: Power Supply (3.3V)

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací CY7C1250V18-333BZC v technických řešeních

Sure! Here are 10 common questions and answers related to the application of CY7C1250V18-333BZC in technical solutions:

  1. Q: What is the CY7C1250V18-333BZC? A: The CY7C1250V18-333BZC is a specific model of synchronous SRAM (Static Random Access Memory) chip manufactured by Cypress Semiconductor.

  2. Q: What is the capacity of the CY7C1250V18-333BZC? A: The CY7C1250V18-333BZC has a capacity of 128 megabits (Mb), which is equivalent to 16 megabytes (MB).

  3. Q: What is the operating voltage range for this chip? A: The operating voltage range for the CY7C1250V18-333BZC is typically between 3.0V and 3.6V.

  4. Q: What is the maximum clock frequency supported by this chip? A: The CY7C1250V18-333BZC can support a maximum clock frequency of 333 MHz.

  5. Q: What is the access time of this SRAM chip? A: The access time of the CY7C1250V18-333BZC is 5 ns, meaning it takes approximately 5 nanoseconds to read or write data.

  6. Q: Can this chip be used in industrial applications? A: Yes, the CY7C1250V18-333BZC is designed to meet industrial temperature requirements and can be used in various industrial applications.

  7. Q: Does this chip have any built-in error correction capabilities? A: No, the CY7C1250V18-333BZC does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

  8. Q: What is the package type of this SRAM chip? A: The CY7C1250V18-333BZC comes in a 165-ball BGA (Ball Grid Array) package.

  9. Q: Can this chip be used in high-performance computing systems? A: Yes, the CY7C1250V18-333BZC is suitable for use in high-performance computing systems due to its fast access time and high clock frequency support.

  10. Q: Are there any specific design considerations when using this chip? A: It is important to ensure proper power supply decoupling and signal integrity measures when designing with the CY7C1250V18-333BZC to achieve optimal performance and reliability.

Please note that these answers are general and may vary depending on the specific requirements and application context.