CY7C1313KV18-250BZI

Product Overview

Category

The CY7C1313KV18-250BZI belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C1313KV18-250BZI offers fast access times and low latency, making it suitable for time-critical operations.
• Large Capacity: With a capacity of 1,048,576 bits (128K x 8), this chip provides ample storage space for data-intensive applications.
• Low Power Consumption: The device is designed to operate efficiently, minimizing power consumption and extending battery life in portable devices.
• Wide Temperature Range: It can function reliably across a wide temperature range, making it suitable for both commercial and industrial applications.

Package

The CY7C1313KV18-250BZI is available in a compact BGA (Ball Grid Array) package. This package type offers excellent thermal performance and facilitates easy integration into circuit boards.

Essence

The essence of the CY7C1313KV18-250BZI lies in its ability to provide high-speed and reliable data storage, enabling efficient processing and execution of tasks in electronic systems.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is commonly around 100 units.

Specifications

• Organization: 128K x 8
• Voltage Supply: 1.7V - 1.9V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years

Detailed Pin Configuration

The CY7C1313KV18-250BZI has a total of 48 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. VDDQ
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. DQ12
17. DQ13
18. DQ14
19. DQ15
20. VSSQ
21. VDDQ
22. DQ16
23. DQ17
24. DQ18
25. DQ19
26. DQ20
27. DQ21
28. DQ22
29. DQ23
30. VSSQ
31. VDDQ
32. DQ24
33. DQ25
34. DQ26
35. DQ27
36. DQ28
37. DQ29
38. DQ30
39. DQ31
40. VSSQ
41. VDDQ
42. A0
43. A1
44. A2
45. A3
46. A4
47. A5
48. VSSQ

Functional Features

• High-Speed Operation: The CY7C1313KV18-250BZI offers fast access times, allowing for quick data retrieval and storage.
• Low Power Consumption: This chip is designed to minimize power consumption, making it suitable for battery-powered devices.
• Easy Integration: The compact BGA package and standard pin configuration facilitate easy integration into various electronic systems.
• Reliable Data Retention: The device ensures data integrity and retention, even in challenging environmental conditions.

Advantages and Disadvantages

Advantages

• High-performance operation
• Large storage capacity
• Low power consumption
• Wide temperature range compatibility
• Reliable data retention

Disadvantages

• Limited availability of alternative models
• Relatively higher cost compared to lower-end SRAM chips

Working Principles

The CY7C1313KV18-250BZI operates based on the principles of static random access memory. It utilizes flip-flops to store and retrieve data. When a read or write operation is initiated, the chip accesses the desired memory location and transfers data through the input/output pins.

Detailed Application Field Plans

The CY7C1313KV18-250BZI finds applications in various fields, including: 1. Computer Systems: Used as cache memory in high-performance computers and servers. 2. Networking Equipment: Enables fast data processing in routers, switches, and network appliances. 3. Telecommunications Systems