CY7C4255V-10ASXC

Product Overview

Category: Integrated Circuit (IC)

Use: The CY7C4255V-10ASXC is a high-performance synchronous static random access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable data retention - Easy integration into existing circuitry

Package: The CY7C4255V-10ASXC is available in a small form factor package, making it suitable for space-constrained applications.

Essence: This IC serves as a vital component in electronic devices, providing fast and reliable data storage capabilities.

Packaging/Quantity: The CY7C4255V-10ASXC is typically sold in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Synchronous SRAM
• Organization: 256K x 18 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 100-pin TQFP

Pin Configuration

The CY7C4255V-10ASXC features a 100-pin TQFP package with the following pin configuration:

```

Pin Name Description

1 VDD Power Supply 2 VDDQ Power Supply for I/O Buffers 3 GND Ground 4 DQ0 Data Input/Output Bit 0 5 DQ1 Data Input/Output Bit 1 ... ... ... 99 DQ17 Data Input/Output Bit 17 100 DQ18 Data Input/Output Bit 18 ```

Note: The above table shows only a subset of the pin configuration for brevity.

Functional Features

• Synchronous operation with an external clock signal
• Burst and page modes for efficient data transfer
• Automatic power-down mode for reduced power consumption during idle periods
• Built-in error correction code (ECC) for enhanced data integrity
• Multiple chip enable inputs for flexible memory organization

Advantages and Disadvantages

Advantages: - High-speed operation enables rapid data access - Low power consumption prolongs battery life in portable devices - Large storage capacity accommodates complex applications - Reliable data retention ensures data integrity over time - Easy integration into existing circuitry simplifies design process

Disadvantages: - Relatively higher cost compared to traditional SRAMs - Limited availability in certain package options - Sensitivity to electromagnetic interference (EMI) may require additional shielding measures

Working Principles

The CY7C4255V-10ASXC operates by storing data in a matrix of memory cells. It utilizes synchronous circuitry, where data transfers are synchronized with an external clock signal. The memory can be accessed in burst or page modes, allowing for efficient retrieval of sequential data. During idle periods, the IC enters a power-down mode to reduce power consumption.

Detailed Application Field Plans

The CY7C4255V-10ASXC finds application in various fields, including but not limited to: 1. Telecommunications equipment 2. Networking devices 3. Industrial automation systems 4. Medical instruments 5. Automotive electronics

In telecommunications equipment, it is used for buffering and caching data in high-speed communication interfaces. Networking devices employ this IC for packet processing and data storage. Industrial automation systems benefit from its fast and reliable memory capabilities for real-time control and monitoring. Medical instruments utilize it for data acquisition and processing. Automotive electronics rely on this IC for storing critical information and enabling advanced driver assistance systems.

Detailed and Complete Alternative Models

1. CY7C4255V-12AXC: Similar to the CY7C4255V-10ASXC, but with a slightly slower access time of 12 ns.
2. CY7C4255V-15ASC: Offers a faster access time of 15 ns compared to the CY7C4255V-10ASXC.
3. CY7C4255V-20AI: Provides a wider operating temperature range (-40°C to +105°C) for extreme environments.

These alternative models offer different performance characteristics and may be suitable for specific application requirements.

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