Diodes Incorporated
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DDTA113ZE-7-F
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DDTA113ZE-7-F Product Overview

Introduction

The DDTA113ZE-7-F belongs to the category of semiconductor devices and is widely used in electronic circuits for amplification and switching purposes. This entry provides a comprehensive overview of the DDTA113ZE-7-F, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Semiconductor Devices
  • Use: Amplification and Switching in Electronic Circuits
  • Characteristics: High Gain, Low Power Consumption
  • Package: SOT-416 (SC-75A)
  • Essence: Small Signal Transistor
  • Packaging/Quantity: Reel, 3000 pieces per reel

Specifications

  • Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -100mA
  • Total Power Dissipation (PT): 150mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The DDTA113ZE-7-F has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • Miniature package for space-constrained applications

Advantages and Disadvantages

Advantages

  • Small footprint
  • Suitable for high-density PCB designs
  • Low power consumption

Disadvantages

  • Limited maximum collector current
  • Sensitivity to temperature variations

Working Principles

The DDTA113ZE-7-F operates based on the principles of bipolar junction transistors, where the flow of current between the emitter and collector is controlled by the base current.

Detailed Application Field Plans

The DDTA113ZE-7-F is commonly used in the following applications: - Audio amplifiers - Signal amplification in sensor circuits - Switching circuits in portable electronic devices

Detailed and Complete Alternative Models

Some alternative models to the DDTA113ZE-7-F include: - DDTA113ZUA-7-F - DDTA113ZCA-7-F - DDTA113ZKA-7-F

In conclusion, the DDTA113ZE-7-F is a versatile semiconductor device with applications in various electronic circuits, offering high gain and low power consumption. Its compact size and functional features make it suitable for use in modern electronic devices.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací DDTA113ZE-7-F v technických řešeních

  1. What is the operating temperature range of DDTA113ZE-7-F?

    • The operating temperature range of DDTA113ZE-7-F is -55°C to +150°C.

  2. What is the maximum collector current of DDTA113ZE-7-F?

    • The maximum collector current of DDTA113ZE-7-F is 100mA.

  3. What is the typical hFE (DC current gain) of DDTA113ZE-7-F?

    • The typical hFE of DDTA113ZE-7-F is 250-600 at a collector current of 10mA.

  4. What is the power dissipation of DDTA113ZE-7-F?

    • The power dissipation of DDTA113ZE-7-F is 200mW.

  5. What is the voltage rating of DDTA113ZE-7-F?

    • The voltage rating of DDTA113ZE-7-F is 50V.

  6. Is DDTA113ZE-7-F RoHS compliant?

    • Yes, DDTA113ZE-7-F is RoHS compliant.

  7. What are the typical applications for DDTA113ZE-7-F?

    • Typical applications for DDTA113ZE-7-F include audio amplification, signal processing, and general purpose switching.

  8. Does DDTA113ZE-7-F require external biasing?

    • No, DDTA113ZE-7-F does not require external biasing.

  9. What is the package type of DDTA113ZE-7-F?

    • DDTA113ZE-7-F comes in a SOT-23 surface mount package.

  10. Is DDTA113ZE-7-F suitable for high-frequency applications?

    • Yes, DDTA113ZE-7-F is suitable for high-frequency applications due to its high transition frequency and low capacitance.