FT24C04A-UNR-T

Product Overview

Category

The FT24C04A-UNR-T belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic systems.

Characteristics

• Non-volatile memory: The FT24C04A-UNR-T retains stored data even when power is disconnected.
• High capacity: This device has a storage capacity of 4 kilobits (512 bytes).
• I2C interface: It utilizes the I2C communication protocol for easy integration into different systems.
• Low power consumption: The FT24C04A-UNR-T operates at low power levels, making it suitable for battery-powered applications.

Package

The FT24C04A-UNR-T is available in a small surface-mount package.

Essence

This product serves as a reliable and compact solution for storing and accessing data in electronic devices.

Packaging/Quantity

The FT24C04A-UNR-T is typically packaged in reels and is available in large quantities for mass production.

Specifications

• Memory capacity: 4 kilobits (512 bytes)
• Interface: I2C
• Supply voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Data retention: 10 years
• Write endurance: 1 million cycles

Detailed Pin Configuration

The FT24C04A-UNR-T has a total of 8 pins, which are assigned specific functions:

1. VCC: Power supply input
2. SDA: Serial data line for I2C communication
3. SCL: Serial clock line for I2C communication
4. WP: Write protect pin for hardware protection
5. A0: Address selection bit 0
6. A1: Address selection bit 1
7. GND: Ground connection
8. NC: No connection

Functional Features

• Random access: The FT24C04A-UNR-T allows for direct access to any memory location, enabling efficient data retrieval.
• Hardware write protection: The WP pin can be used to protect the stored data from accidental overwriting.
• Sequential read and write operations: This device supports sequential read and write operations, enhancing data transfer efficiency.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Compact package size facilitates integration into space-constrained designs.
• Low power consumption extends battery life in portable devices.
• High write endurance enables frequent data updates without compromising reliability.

Disadvantages

• Limited storage capacity compared to higher-end memory devices.
• Relatively slower data transfer rate compared to some other memory technologies.

Working Principles

The FT24C04A-UNR-T utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges in a floating gate transistor structure. When data is written, an electrical charge is applied to the floating gate, altering its threshold voltage. This change in threshold voltage determines the stored data value. During read operations, the threshold voltage is measured to retrieve the stored data.

Detailed Application Field Plans

The FT24C04A-UNR-T finds applications in various electronic systems, including but not limited to: - Consumer electronics: Used in smart TVs, set-top boxes, and audio/video equipment for storing configuration settings and user preferences. - Automotive: Employed in automotive control units for storing critical data such as calibration values and fault codes. - Industrial automation: Utilized in industrial control systems for storing parameters, program data, and system configurations. - Medical devices: Integrated into medical equipment for storing patient data, device settings, and event logs.

Detailed and Complete Alternative Models

• FT24C02A-UNR-T: A similar memory device with a capacity of 2 kilobits (256 bytes).
• FT24C08A-UNR-T: A higher-capacity version with 8 kilobits (1 kilobyte) of storage.
• FT24C16A-UNR-T: Offers even greater capacity with 16 kilobits (2 kilobytes) of storage.

These alternative models provide options for different memory requirements in electronic systems.

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