MB85R1002ANC-GE1

Product Overview

Category

The MB85R1002ANC-GE1 belongs to the category of non-volatile ferroelectric random access memory (FeRAM) products.

Use

This product is primarily used for data storage in various electronic devices, such as consumer electronics, industrial equipment, and automotive applications.

Characteristics

• Non-volatile: The MB85R1002ANC-GE1 retains stored data even when power is disconnected.
• High-speed operation: It offers fast read and write access times, making it suitable for applications requiring quick data retrieval.
• Low power consumption: This FeRAM product consumes minimal power during read and write operations.
• High endurance: The MB85R1002ANC-GE1 can endure a high number of read and write cycles without degradation.
• Wide operating temperature range: It can operate reliably across a wide temperature range, making it suitable for harsh environments.

Package and Quantity

The MB85R1002ANC-GE1 is available in a compact surface-mount package. Each package contains a single unit of the product.

Specifications

• Capacity: 1 Megabit (128K x 8 bits)
• Operating voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Interface: Serial Peripheral Interface (SPI)
• Data retention: More than 10 years
• Endurance: Up to 10^12 read/write cycles

Detailed Pin Configuration

The MB85R1002ANC-GE1 has a total of eight pins, each serving a specific function. The pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CS: Chip select for SPI communication
4. SCK: Serial clock input for SPI communication
5. SI: Serial data input for SPI communication
6. SO: Serial data output for SPI communication
7. HOLD: Hold input for SPI communication
8. WP: Write protect input for SPI communication

Functional Features

• Random access: The MB85R1002ANC-GE1 allows direct read and write access to any memory location, enabling efficient data manipulation.
• Instantaneous write: Data can be written to the FeRAM cells without the need for pre-erasing, resulting in faster write operations compared to other non-volatile memories.
• High reliability: FeRAM technology provides excellent data retention and endurance characteristics, ensuring reliable long-term storage.

Advantages and Disadvantages

Advantages

• Fast read and write access times
• Low power consumption
• High endurance
• Wide operating temperature range
• Non-volatile data storage

Disadvantages

• Relatively lower density compared to some other memory technologies
• Higher cost per bit compared to traditional volatile memories

Working Principles

The MB85R1002ANC-GE1 utilizes ferroelectric materials to store data. It employs a unique polarization mechanism that allows the material's electrical polarization to be switched between two stable states, representing binary data. This polarization state can be read and modified using an external voltage applied through the pins of the device.

Detailed Application Field Plans

The MB85R1002ANC-GE1 finds applications in various fields, including: - Consumer electronics: Smartphones, tablets, digital cameras - Industrial equipment: Measurement devices, control systems, robotics - Automotive: Infotainment systems, advanced driver-assistance systems (ADAS), engine control units (ECUs)

Detailed and Complete Alternative Models

• MB85R1002ANC-G-JNE1
• MB85R1002ANC-G-JNERE1
• MB85R1002ANC-G-JNE2
• MB85R1002ANC-G-JNERE2

These alternative models offer similar specifications and functionality to the MB85R1002ANC-GE1, providing flexibility for different application requirements.

In conclusion, the MB85R1002ANC-GE1 is a non-volatile FeRAM product with fast operation, low power consumption, and high endurance. It finds applications in various electronic devices across different industries. While it may have lower density and higher cost compared to some alternatives, its unique working principle and reliability make it a valuable choice for data storage needs.