MB85R256GPF-G-BND-ERE1

Product Overview

Category

The MB85R256GPF-G-BND-ERE1 belongs to the category of non-volatile ferroelectric random access memory (FeRAM) products.

Use

This product is primarily used for data storage in various electronic devices, such as consumer electronics, industrial equipment, and automotive applications.

Characteristics

• Non-volatile: The MB85R256GPF-G-BND-ERE1 retains stored data even when power is disconnected.
• High-speed operation: It offers fast read and write access times, making it suitable for applications requiring quick data retrieval.
• Low power consumption: The product consumes minimal power during both active and standby modes, contributing to energy efficiency.
• High endurance: With a high number of read/write cycles, the MB85R256GPF-G-BND-ERE1 ensures long-lasting performance.
• Wide operating temperature range: It can operate reliably in extreme temperature conditions, ranging from -40°C to 85°C.

Package and Quantity

The MB85R256GPF-G-BND-ERE1 is available in a compact package, ensuring easy integration into various circuit designs. It is typically sold in reels or trays, with a standard quantity of 2500 units per reel.

Specifications

• Memory capacity: 256 kilobits (32 kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating voltage: 2.7V to 3.6V
• Data retention: Up to 10 years
• Operating frequency: Up to 20 MHz
• Package dimensions: 8-pin SOP (Small Outline Package)

Detailed Pin Configuration

The MB85R256GPF-G-BND-ERE1 features an 8-pin SOP package with the following pin configuration:

1. Chip Select (CS)
2. Serial Clock (SCK)
3. Serial Data Input/Output (SDI/SDO)
4. Write Protect (WP)
5. Hold (HOLD)
6. Ground (GND)
7. Power Supply (VCC)
8. No Connection (NC)

Functional Features

• Random access: The FeRAM technology allows for random access to any memory location, enabling efficient data retrieval.
• High-speed operation: The MB85R256GPF-G-BND-ERE1 offers fast read and write speeds, reducing access latency.
• Low power consumption: It consumes minimal power during both active and standby modes, making it suitable for battery-powered devices.
• High endurance: With a high number of read/write cycles, the product ensures reliable and durable performance.
• Data integrity: The non-volatile nature of FeRAM ensures data integrity even in the event of power loss or system failure.

Advantages and Disadvantages

Advantages

• Non-volatile memory with high endurance
• Fast read and write access times
• Low power consumption
• Wide operating temperature range
• Compact package for easy integration

Disadvantages

• Relatively smaller memory capacity compared to other storage technologies
• Higher cost per bit compared to traditional volatile memories

Working Principles

The MB85R256GPF-G-BND-ERE1 utilizes ferroelectric materials to store data. It employs a ferroelectric capacitor structure that can retain polarization states, representing binary data as positive or negative charges. The stored data remains intact even when power is disconnected, thanks to the inherent properties of ferroelectric materials.

During read operations, the stored charge is sensed and amplified, providing the desired data output. Write operations involve applying an electric field to change the polarization state of the ferroelectric material, allowing data to be written into the memory cells.

Detailed Application Field Plans

The MB85R256GPF-G-BND-ERE1 finds applications in various fields, including: 1. Consumer electronics: Smartphones, tablets, digital cameras, and wearable devices. 2. Industrial equipment: Measurement instruments, control systems, and robotics. 3. Automotive: Infotainment systems, advanced driver-assistance systems (ADAS), and engine management.

Detailed and Complete Alternative Models

1. MB85R256A: Similar to the MB85R256GPF-G-BND-ERE1, but with a different package type (e.g., DIP or TSOP).
2. MB85R256C: Offers higher memory capacity (e.g., 512 kilobits) for applications requiring more storage space.
3. MB85R256D: Provides extended operating temperature range (-40°C to 105°C) for harsh environment applications.

These alternative models offer similar functionality and compatibility with the MB85R256GPF-G-BND-ERE1, allowing users to choose the most suitable option based on their specific requirements.

In conclusion, the MB85R256GPF-G-BND-ERE1 is a non-volatile Fe