6116LA25SOG8

Product Overview

Category

The 6116LA25SOG8 belongs to the category of integrated circuits (ICs).

Use

This IC is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• The 6116LA25SOG8 is a low-power static random access memory (SRAM) chip.
• It has a capacity of 2,048 words, with each word consisting of 8 bits.
• The IC operates at a voltage range of 4.5V to 5.5V.
• It offers fast access times and low power consumption.
• The chip is designed to be compatible with various microprocessors and digital systems.

Package

The 6116LA25SOG8 is available in a standard 24-pin dual in-line package (DIP).

Essence

The essence of this IC lies in its ability to provide reliable and efficient data storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The 6116LA25SOG8 is typically sold in reels or tubes, containing multiple units per package. The exact quantity may vary depending on the supplier.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 2,048 words x 8 bits
• Operating Voltage: 4.5V - 5.5V
• Access Time: <25 ns
• Package Type: 24-pin Dual In-Line Package (DIP)

Detailed Pin Configuration

The pin configuration of the 6116LA25SOG8 is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Data Input/Output (D0)
5. Data Input/Output (D1)
6. Data Input/Output (D2)
7. Data Input/Output (D3)
8. Data Input/Output (D4)
9. Data Input/Output (D5)
10. Data Input/Output (D6)
11. Data Input/Output (D7)
12. Address Input (A0)
13. Address Input (A1)
14. Address Input (A2)
15. Address Input (A3)
16. Address Input (A4)
17. Address Input (A5)
18. Address Input (A6)
19. Address Input (A7)
20. Address Input (A8)
21. Address Input (A9)
22. Address Input (A10)
23. Address Input (A11)
24. Ground (GND)
25. Vcc (+5V)

Functional Features

• The 6116LA25SOG8 offers non-volatile storage of digital data.
• It provides fast and reliable read/write operations.
• The chip supports simultaneous read and write operations.
• It has built-in error detection and correction mechanisms.
• The IC features low power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Fast access times enable quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Compatibility with various microprocessors and digital systems enhances versatility.
• Error detection and correction mechanisms ensure data integrity.

Disadvantages

• Limited storage capacity compared to modern memory technologies.
• Relatively higher cost per unit compared to other memory options.
• Not suitable for applications requiring large-scale data storage.

Working Principles

The 6116LA25SOG8 operates based on the principles of static random access memory (SRAM). It utilizes flip-flop circuits to store and retrieve data. When powered, the IC maintains the stored data without the need for constant refreshing, allowing for faster access times compared to dynamic RAM (DRAM).

Detailed Application Field Plans

The 6116LA25SOG8 finds applications in various electronic devices, including but not limited to: - Microcontrollers - Embedded systems - Communication equipment - Industrial control systems - Medical devices - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the 6116LA25SOG8 include: - 6116LA-15P: 2,048 x 8 SRAM, 15 ns access time, 24-pin DIP package. - 6116LA-35P: 2,048 x 8 SRAM, 35 ns access time, 24-pin DIP package. - 6116LA-50P: 2,048 x 8 SRAM, 50 ns access time, 24-pin DIP package. - 6116LA-70P: 2,048 x 8 SRAM, 70 ns access time, 24-pin DIP package.

These alternative models provide options with varying access times to suit different application requirements.

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