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71V416L10BE

Encyclopedia Entry: 71V416L10BE

Product Information Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory chip
  • Characteristics: High-speed, low-power, non-volatile
  • Package: DIP (Dual In-line Package)
  • Essence: Non-volatile memory storage
  • Packaging/Quantity: Available in tubes of 25 units

Specifications

The 71V416L10BE is a memory chip with the following specifications:

  • Memory Type: SRAM (Static Random Access Memory)
  • Density: 4 Megabits (4Mbit)
  • Organization: 512K x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Standby Current: 5 mA (maximum)
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The 71V416L10BE has a total of 32 pins arranged as follows:

┌───┬───┐ │1 └─ 32│ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ └───┴───┘

Functional Features

The 71V416L10BE offers the following functional features:

  • High-speed operation: The chip provides fast access times of 10 ns, allowing for efficient data retrieval.
  • Low-power consumption: With a standby current of only 5 mA, the chip minimizes power usage, making it suitable for battery-powered devices.
  • Non-volatile storage: The memory is non-volatile, meaning it retains stored data even when power is removed.

Advantages and Disadvantages

Advantages: - Fast access times enable quick data retrieval. - Low-power consumption extends battery life in portable devices. - Non-volatile storage ensures data retention.

Disadvantages: - Limited density compared to higher-capacity memory chips. - Higher cost per bit compared to some other memory technologies.

Working Principles

The 71V416L10BE operates based on the principles of static random access memory (SRAM). It stores data using flip-flop circuits, which retain information as long as power is supplied. The chip utilizes a combination of transistors and capacitors to store and retrieve data quickly.

Detailed Application Field Plans

The 71V416L10BE can be used in various applications, including but not limited to:

  1. Embedded Systems: The chip can serve as a storage element in microcontrollers and other embedded systems, providing fast access to critical data.
  2. Networking Equipment: It can be utilized in routers, switches, and network appliances to store routing tables and configuration data.
  3. Industrial Control Systems: The memory chip can be integrated into control systems for automation, storing program code and data.
  4. Medical Devices: It can be employed in medical equipment for data buffering and temporary storage.

Detailed and Complete Alternative Models

Some alternative models to the 71V416L10BE include:

  1. 71V416S10PH - Similar specifications but with a smaller package size (SOJ).
  2. 71V416S10YGI - Higher density variant with 8 Megabits (8Mbit) capacity.
  3. 71V416S12PHI - Improved access time of 12 ns for faster data retrieval.

These alternative models offer different package options, higher densities, and improved performance characteristics to suit specific application requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací 71V416L10BE v technických řešeních

Sure! Here are 10 common questions and answers related to the application of 71V416L10BE in technical solutions:

  1. Q: What is the 71V416L10BE? A: The 71V416L10BE is a specific type of memory chip commonly used in technical solutions.

  2. Q: What is the capacity of the 71V416L10BE? A: The 71V416L10BE has a capacity of 4 megabits (or 512 kilobytes).

  3. Q: What is the voltage requirement for the 71V416L10BE? A: The 71V416L10BE operates at a voltage range of 3.0V to 3.6V.

  4. Q: What is the access time of the 71V416L10BE? A: The 71V416L10BE has an access time of 10 nanoseconds.

  5. Q: Can the 71V416L10BE be used in industrial applications? A: Yes, the 71V416L10BE is suitable for use in various industrial applications.

  6. Q: Is the 71V416L10BE compatible with different microcontrollers? A: Yes, the 71V416L10BE is designed to be compatible with a wide range of microcontrollers.

  7. Q: Does the 71V416L10BE support multiple read and write cycles? A: Yes, the 71V416L10BE supports multiple read and write cycles, making it suitable for dynamic data storage.

  8. Q: Can the 71V416L10BE operate in extreme temperature conditions? A: Yes, the 71V416L10BE is designed to operate in a wide temperature range, including extreme conditions.

  9. Q: Does the 71V416L10BE have built-in error correction capabilities? A: No, the 71V416L10BE does not have built-in error correction capabilities. External error correction techniques may be required.

  10. Q: Can the 71V416L10BE be used in battery-powered devices? A: Yes, the 71V416L10BE can be used in battery-powered devices due to its low power consumption characteristics.

Please note that these answers are general and may vary depending on the specific implementation and requirements of your technical solution.