Encyclopedia Entry: 71V416L10BE8

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V416L10BE8 is a high-speed, low-power CMOS SRAM (Static Random Access Memory) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Easy integration into existing circuitry - Reliable data retention

Package: The 71V416L10BE8 is available in a standard 44-pin TSOP (Thin Small Outline Package) format. This package provides a compact and durable housing for the IC, ensuring its protection during handling and installation.

Essence: The essence of the 71V416L10BE8 lies in its ability to provide high-speed and efficient data storage in electronic devices, contributing to their overall performance and functionality.

Packaging/Quantity: The 71V416L10BE8 is typically packaged in reels or trays, with each reel containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Organization: 4 Megabit x 16-bit
• Supply Voltage: 3.3V ± 0.3V
• Access Time: 10 ns
• Standby Current: 10 μA (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years (minimum)

Detailed Pin Configuration

The 71V416L10BE8 features a 44-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. VCC
18. OE#
19. WE#
20. I/O0
21. I/O1
22. I/O2
23. I/O3
24. I/O4
25. I/O5
26. I/O6
27. I/O7
28. I/O8
29. I/O9
30. I/O10
31. I/O11
32. I/O12
33. I/O13
34. I/O14
35. I/O15
36. GND
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage in electronic devices.
• Large storage capacity of 4 Megabits provides ample space for data storage requirements.
• Easy integration into existing circuitry simplifies the design and implementation process.
• Reliable data retention ensures that stored information remains intact over extended periods.

Advantages and Disadvantages

Advantages: - High-speed operation enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data storage needs. - Easy integration simplifies circuit design and reduces development time. - Reliable data retention ensures data integrity.

Disadvantages: - Limited compatibility with certain older systems or devices. - Higher cost compared to lower-capacity SRAM ICs. - Sensitivity to electrostatic discharge (ESD) requires careful handling during installation.

Working Principles

The 71V416L10BE8 operates based on the principles of static random access memory. It utilizes a combination of flip-flops and logic gates to store and retrieve data. When powered, the IC maintains the stored information in its memory cells until accessed or modified by the system.

Detailed Application Field Plans

The 71V416L10BE8 finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Networking equipment - Telecommunications devices - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. 71V416L15BE8: Similar to the 71V416L10BE8, but with a faster access time of 15 ns.
2. 71V416S10PHI: A low-power variant of the 71V416L10BE8 with an extended temperature range.
3. 71V416Y10PFI: A high-reliability version of the 71V416L10BE8 designed for harsh environments.

These alternative models offer similar functionality and compatibility, providing options for different performance requirements