8501BYLF

Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: Bipolar Junction Transistor (BJT)
Packaging/Quantity: Bulk, 1000 pieces per pack

Specifications and Parameters

Collector Current (Ic): 500mA
Collector-Emitter Voltage (Vce): 30V
Emitter-Base Voltage (Veb): 5V
Power Dissipation (Pd): 625mW
Transition Frequency (ft): 300MHz
Operating Temperature Range: -55°C to +150°C

Pin Configuration

The 8501BYLF transistor has three pins:

Base (B)
Emitter (E)
Collector (C)

Functional Characteristics

High current gain (hFE)
Low noise figure
Fast switching speed
Wide frequency response
Good linearity

Advantages and Disadvantages

Advantages: - High gain allows for signal amplification - Low noise figure ensures minimal distortion - Fast switching speed enables rapid signal processing

Disadvantages: - Limited power handling capability - Narrow operating temperature range

Applicable Range of Products

The 8501BYLF transistor is commonly used in electronic devices that require signal amplification, such as audio amplifiers, radio receivers, and communication systems.

Working Principles

The 8501BYLF is a bipolar junction transistor (BJT) that operates based on the principles of current amplification. It consists of three layers of semiconductor material - the emitter, base, and collector. By controlling the current flow between the base and emitter, the transistor can amplify weak signals.

Detailed Application Field Plans

Audio Amplifiers: The 8501BYLF can be used in audio amplifiers to boost the strength of audio signals, resulting in louder and clearer sound output.
Radio Receivers: This transistor is suitable for radio receivers as it enhances the weak incoming radio signals, allowing for better reception.
Communication Systems: The 8501BYLF can be utilized in communication systems to amplify signals for transmission or reception, improving overall system performance.

Detailed Alternative Models

8502BYLF
8503BYLF
8504BYLF
8505BYLF
8506BYLF

5 Common Technical Questions and Answers

Q: What is the maximum collector current (Ic) of the 8501BYLF? A: The maximum collector current is 500mA.
Q: What is the operating temperature range of the transistor? A: The operating temperature range is -55°C to +150°C.
Q: Can the 8501BYLF be used in high-frequency applications? A: Yes, the transistor has a transition frequency of 300MHz, making it suitable for high-frequency applications.
Q: What is the power dissipation rating of the 8501BYLF? A: The transistor can handle a power dissipation of up to 625mW.
Q: How many pins does the 8501BYLF have? A: The transistor has three pins - Base (B), Emitter (E), and Collector (C).

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