IDT71V124SA12PH

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V124SA12PH is a high-speed, low-power CMOS static random access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High-speed operation - Low power consumption - Non-volatile storage - Reliable performance - Wide temperature range

Package: The IDT71V124SA12PH is available in a 44-pin plastic thin quad flat pack (TQFP) package.

Essence: This IC serves as a reliable and efficient memory component, providing fast and non-volatile data storage capabilities.

Packaging/Quantity: Each package contains one IDT71V124SA12PH IC.

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Access Time: 12 ns
• Operating Voltage: 3.3V
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention Voltage: 2.0V (min)
• Package Type: TQFP-44

Detailed Pin Configuration

The IDT71V124SA12PH features a total of 44 pins, each serving a specific function. Here is the detailed pin configuration:

1. A0-A16: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. CE1, CE2: Chip Enable Inputs
4. OE: Output Enable Input
5. WE: Write Enable Input
6. VCC: Power Supply (+3.3V)
7. GND: Ground (0V)

(Continued for remaining pins...)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage.
• Non-volatile storage retains data even when power is disconnected.
• Reliable performance guarantees consistent operation in various conditions.
• Wide temperature range enables usage in extreme environments.

Advantages and Disadvantages

Advantages: - Fast access time improves overall system performance. - Low power consumption prolongs battery life in portable devices. - Non-volatile storage eliminates the need for constant data backup. - Reliable performance ensures data integrity and system stability. - Wide temperature range expands the range of potential applications.

Disadvantages: - Limited memory size may not be suitable for large-scale data storage requirements. - Higher cost compared to alternative memory technologies. - Sensitive to electrostatic discharge (ESD) and requires proper handling precautions.

Working Principles

The IDT71V124SA12PH operates based on the principles of static random access memory. It stores data in a matrix of memory cells, each consisting of a flip-flop circuit. The stored data can be accessed and modified through specific address inputs and control signals. The IC utilizes CMOS technology, which provides high-speed operation and low power consumption.

Detailed Application Field Plans

The IDT71V124SA12PH finds applications in various electronic systems, including but not limited to: 1. Computer motherboards 2. Networking equipment 3. Telecommunications devices 4. Industrial control systems 5. Automotive electronics 6. Medical instruments

In these applications, the IC serves as a reliable memory component, facilitating data storage and retrieval operations.

Detailed and Complete Alternative Models

1. IDT71V124SA15PH: Similar to IDT71V124SA12PH, but with a faster access time of 15 ns.
2. IDT71V256SA10PH: A higher-capacity SRAM with 2 Megabits (256K x 8) and a 10 ns access time.
3. IDT71V416SA12PH: A larger SRAM with 4 Megabits (512K x 8) and a 12 ns access time.

These alternative models offer different memory capacities and access times, allowing users to choose the most suitable option for their specific requirements.

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