IDT71V2546S100PF

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics:
- High-speed performance
- Low power consumption
- Large storage capacity
Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
Essence: Non-volatile Static Random Access Memory (nvSRAM)
Packaging/Quantity: Tape and Reel, 250 units per reel

Specifications

Memory Type: Asynchronous nvSRAM
Density: 256Kb (32K x 8)
Operating Voltage: 3.0V to 3.6V
Access Time: 10ns
Standby Current: 20μA (typical)
Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V2546S100PF has a total of 48 pins. The pin configuration is as follows:

A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
CE#
OE#
WE#
BYTE#
VCC
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
VSS
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC

Functional Features

Non-volatile storage: Retains data even when power is lost
High-speed access: 10ns access time for quick data retrieval
Low power consumption: Operates at a standby current of only 20μA
Byte-write capability: Allows individual byte-level writes
Automatic store on power loss: Ensures data integrity during power interruptions

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention - Fast access time for efficient data retrieval - Low power consumption for energy efficiency - Byte-write capability provides flexibility in data manipulation

Disadvantages: - Limited storage capacity compared to other memory devices - Higher cost compared to traditional volatile RAM

Working Principles

The IDT71V2546S100PF is based on the non-volatile Static Random Access Memory (nvSRAM) technology. It combines the speed and ease of use of SRAM with the non-volatility of Flash memory. The device utilizes a backup power source, such as a small capacitor or battery, to retain data during power loss. This ensures that critical information is not lost and can be accessed quickly upon power restoration.

Detailed Application Field Plans

The IDT71V2546S100PF is commonly used in various applications that require reliable and fast non-volatile memory. Some potential application fields include:

Industrial Control Systems: Used for storing critical system parameters and configuration data in industrial automation systems.
Automotive Electronics: Provides non-volatile storage for vehicle control units, allowing quick access to essential data during power cycles.
Medical Devices: Used in medical equipment to store patient data, settings, and logs, ensuring data integrity even during power interruptions.
Aerospace and Defense: Utilized in avionics systems and military equipment for storing mission-critical information that needs to be retained during power loss.

Detailed and Complete Alternative Models

IDT71V2546S100BQI: Similar to IDT71V2546S100PF but available in a 48-pin Quad Flat Package (QFP).
Cypress CY14B256LA-SZ45XI: A comparable nvSRAM with the same density and operating voltage, available in a 44-pin Small Outline Integrated Circuit (SOIC) package.
Microchip Technology 23LC1024-I/SN: A 1Mb SPI Serial SRAM with similar characteristics, available in an 8-pin SOIC package.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V2546S100PF v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V2546S100PF in technical solutions:

Q: What is IDT71V2546S100PF? A: IDT71V2546S100PF is a high-speed, low-power CMOS static RAM (SRAM) with a capacity of 256K (32K x 8) bits.
Q: What are the key features of IDT71V2546S100PF? A: Some key features include a fast access time of 10 ns, low power consumption, wide operating voltage range, and a small form factor.
Q: What are the typical applications of IDT71V2546S100PF? A: IDT71V2546S100PF is commonly used in various applications such as networking equipment, telecommunications systems, industrial automation, and embedded systems.
Q: How does IDT71V2546S100PF handle power management? A: IDT71V2546S100PF has a standby mode that reduces power consumption when the device is not actively accessed, making it suitable for battery-powered devices.
Q: Can IDT71V2546S100PF operate at different voltages? A: Yes, IDT71V2546S100PF supports a wide operating voltage range from 3.0V to 3.6V, allowing flexibility in various system designs.
Q: Does IDT71V2546S100PF have any built-in error correction capabilities? A: No, IDT71V2546S100PF does not have built-in error correction capabilities. Additional error correction techniques may be required for critical applications.
Q: What is the maximum operating frequency of IDT71V2546S100PF? A: The maximum operating frequency of IDT71V2546S100PF is typically around 100 MHz, making it suitable for high-speed data processing.
Q: Can IDT71V2546S100PF be used in both commercial and industrial temperature ranges? A: Yes, IDT71V2546S100PF is designed to operate in both commercial (0°C to 70°C) and industrial (-40°C to 85°C) temperature ranges.
Q: Does IDT71V2546S100PF support simultaneous read and write operations? A: No, IDT71V2546S100PF does not support simultaneous read and write operations. It follows a standard SRAM architecture with separate read and write cycles.
Q: Are there any specific design considerations when using IDT71V2546S100PF? A: Some design considerations include proper decoupling capacitors, signal integrity, and ensuring the device operates within specified voltage and temperature ranges.

Please note that these answers are general and may vary depending on the specific requirements and application context.