IDT71V256SA12Y

Product Overview

Category

The IDT71V256SA12Y belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used as a high-speed memory device in various electronic systems, such as computers, telecommunications equipment, and consumer electronics.

Characteristics

• High-speed operation: The IDT71V256SA12Y offers fast access times, allowing for efficient data retrieval and storage.
• Large storage capacity: With a capacity of 256 kilobits, this SRAM chip can store a significant amount of data.
• Low power consumption: The IDT71V256SA12Y is designed to operate with low power requirements, making it suitable for battery-powered devices.
• Reliable performance: This chip is known for its stable and reliable operation, ensuring data integrity.

Package

The IDT71V256SA12Y is available in a standard 28-pin Small Outline Integrated Circuit (SOIC) package.

Essence

The essence of the IDT71V256SA12Y lies in its ability to provide high-speed and reliable data storage in electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Organization: 32K x 8 bits
• Supply voltage: 3.3V
• Access time: 12 ns
• Operating temperature range: -40°C to +85°C
• Standby current: 10 μA (typical)
• Active current: 50 mA (typical)

Detailed Pin Configuration

The IDT71V256SA12Y has a total of 28 pins, which are assigned specific functions. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (+3.3V)
7. Ground (GND)

Note: The remaining pins are either not connected or reserved for specific purposes.

Functional Features

• Chip Enable (CE): Activates the chip and enables data access.
• Output Enable (OE): Controls the output buffer, allowing data to be read from the chip.
• Write Enable (WE): Enables write operations to the chip.
• Address Inputs (A0-A14): Selects the memory location for read or write operations.
• Data Inputs/Outputs (DQ0-DQ7): Transfers data between the chip and the external system.
• Power Supply (+3.3V): Provides the necessary power for the chip's operation.
• Ground (GND): Serves as the reference voltage for the chip.

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access.
• Large storage capacity meets the requirements of various applications.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies like Dynamic RAM (DRAM).
• Higher cost per bit compared to larger capacity memory chips.
• Not suitable for applications requiring non-volatile memory.

Working Principles

The IDT71V256SA12Y operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip utilizes a combination of transistors and capacitors to store and retrieve data quickly.

Detailed Application Field Plans

The IDT71V256SA12Y finds application in various electronic systems, including but not limited to: - Personal computers and laptops - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. IDT71V256SA15Y: Similar to the IDT71V256SA12Y, but with a faster access time of 15 ns.
2. IDT71V256SA20Y: Offers a larger storage capacity of 512 kilobits.
3. IDT71V256SA25Y: Provides an even faster access time of 25 ns.

These alternative models offer different specifications to cater to specific application requirements.

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