IDT71V25761S200PFI

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
Essence: Provides high-performance memory storage for various electronic devices
Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

Memory Type: Synchronous SRAM
Density: 256K x 36 bits
Operating Voltage: 2.5V ± 0.2V
Access Time: 10 ns
Operating Temperature Range: -40°C to +85°C
Data Retention: 10 years
Package Dimensions: 13mm x 13mm

Pin Configuration

The IDT71V25761S200PFI has a total of 100 pins. The pin configuration is as follows:

VDDQ
VSSQ
NC
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
VDDQ
VSSQ
NC
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61

Functional Features

High-speed operation with a 10 ns access time
Low-power consumption for energy-efficient applications
Synchronous interface for easy integration with other components
Provides reliable and non-volatile storage of data
Supports simultaneous read and write operations

Advantages and Disadvantages

Advantages: - High-speed performance allows for quick data access - Low-power consumption extends battery life in portable devices - Synchronous interface simplifies system design and integration - Reliable data retention ensures data integrity over time

Disadvantages: - Limited storage capacity compared to other memory technologies - Higher cost per bit compared to alternative memory options - Sensitivity to environmental conditions such as temperature and voltage fluctuations

Working Principles

The IDT71V25761S200PFI is a synchronous SRAM that stores data using flip-flops. It operates based on the principle of synchronous circuitry, where data transfers are synchronized with clock signals. The memory cells are organized into a matrix of rows and columns, allowing for efficient read and write operations. The device uses an internal address decoder to select specific memory locations for data access.

Detailed Application Field Plans

The IDT71

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V25761S200PFI v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V25761S200PFI in technical solutions:

Q: What is the IDT71V25761S200PFI? A: The IDT71V25761S200PFI is a high-speed, low-power, 3.3V CMOS synchronous static RAM (SRAM) with a capacity of 256K x 36.
Q: What are the key features of the IDT71V25761S200PFI? A: Some key features include a synchronous interface, burst mode operation, multiple chip enable options, and a wide operating temperature range.
Q: What is the maximum operating frequency of the IDT71V25761S200PFI? A: The IDT71V25761S200PFI can operate at a maximum frequency of 200 MHz.
Q: Can the IDT71V25761S200PFI be used in battery-powered devices? A: Yes, the IDT71V25761S200PFI is designed to operate at low power, making it suitable for battery-powered devices.
Q: How is the IDT71V25761S200PFI interfaced with other components? A: The IDT71V25761S200PFI uses a synchronous interface, which means it requires a clock signal and control signals to communicate with other components.
Q: Can the IDT71V25761S200PFI be used in industrial applications? A: Yes, the IDT71V25761S200PFI has a wide operating temperature range (-40°C to +85°C), making it suitable for industrial applications.
Q: Does the IDT71V25761S200PFI support burst mode operation? A: Yes, the IDT71V25761S200PFI supports burst mode operation, allowing for efficient data transfer.
Q: What are the different chip enable options available for the IDT71V25761S200PFI? A: The IDT71V25761S200PFI supports multiple chip enable options, including separate chip enables for read and write operations.
Q: Can the IDT71V25761S200PFI be used in high-speed applications? A: Yes, the IDT71V25761S200PFI is a high-speed SRAM with a maximum operating frequency of 200 MHz, making it suitable for high-speed applications.
Q: Are there any specific design considerations when using the IDT71V25761S200PFI? A: Some design considerations include proper power supply decoupling, signal integrity, and ensuring proper timing requirements are met for synchronous operation.

Please note that these answers are general and may vary depending on the specific application and requirements.