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IDT71V2576YS150PFG
Product Overview
Category
The IDT71V2576YS150PFG belongs to the category of semiconductor memory devices.
Use
This product is primarily used for storing and retrieving digital information in electronic systems.
Characteristics
- High storage capacity
- Fast access times
- Low power consumption
- Reliable data retention
- Compatibility with various electronic systems
Package
The IDT71V2576YS150PFG is available in a compact and durable package, designed to protect the internal components from external factors such as moisture and physical damage.
Essence
The essence of this product lies in its ability to provide efficient and reliable storage solutions for electronic devices.
Packaging/Quantity
The IDT71V2576YS150PFG is typically packaged in trays or reels, depending on the quantity ordered. The exact packaging and quantity can vary based on customer requirements.
Specifications
- Memory Type: Static Random Access Memory (SRAM)
- Organization: 256K x 16 bits
- Operating Voltage: 3.3V
- Access Time: 15 ns
- Operating Temperature Range: -40°C to +85°C
- Pin Count: 44
- Data Retention: >10 years
- Package Type: Fine-pitch Ball Grid Array (FBGA)
Detailed Pin Configuration
- VCC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- GND
- WE#
- OE#
- CE1#
- CE2#
- CE3#
- BYTE#
- UB#
- LB#
- ZZ#
- NC
- NC
- VCC
- VCC
- VCC
- VCC
- VCC
- VCC
- VCC
Functional Features
- High-speed data access and retrieval
- Low power consumption in standby mode
- Easy integration into various electronic systems
- Multiple chip enable options for flexible usage
- Byte write capability for efficient memory utilization
Advantages and Disadvantages
Advantages
- Fast access times enhance overall system performance
- Low power consumption prolongs battery life in portable devices
- Reliable data retention ensures data integrity
- Compatibility with different electronic systems allows for versatile applications
Disadvantages
- Limited storage capacity compared to other memory technologies
- Higher cost per bit compared to some alternative memory solutions
Working Principles
The IDT71V2576YS150PFG operates based on the principles of static random access memory (SRAM). It stores digital information in a volatile manner, meaning that the stored data is lost when power is removed. The memory cells within the device are organized in a matrix, allowing for fast and random access to any location within the memory array.
Detailed Application Field Plans
The IDT71V2576YS150PFG finds application in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics
Detailed and Complete Alternative Models
- IDT71V2576S
- IDT71V2576L
- IDT71V2576SA
- IDT71V2576LA
- IDT71V2576YS
- IDT71V2576YL
These alternative models offer similar functionality and characteristics to the IDT71V2576YS150PFG, providing customers with options based on their specific requirements.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V2576YS150PFG v technických řešeních
Sure! Here are 10 common questions and answers related to the application of IDT71V2576YS150PFG in technical solutions:
Q: What is IDT71V2576YS150PFG? A: IDT71V2576YS150PFG is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V2576YS150PFG? A: The capacity of IDT71V2576YS150PFG is 256 kilobits (Kb), which is equivalent to 32 kilobytes (KB).
Q: What does "Synchronous" mean in IDT71V2576YS150PFG? A: "Synchronous" means that the data transfers in IDT71V2576YS150PFG are synchronized with a clock signal, allowing for faster and more efficient data access.
Q: What is the operating voltage range of IDT71V2576YS150PFG? A: The operating voltage range of IDT71V2576YS150PFG is typically between 4.5 volts (V) and 5.5 volts (V).
Q: What is the access time of IDT71V2576YS150PFG? A: The access time of IDT71V2576YS150PFG is 15 nanoseconds (ns), meaning it takes approximately 15 ns to read or write data.
Q: Can IDT71V2576YS150PFG be used in battery-powered devices? A: Yes, IDT71V2576YS150PFG can be used in battery-powered devices as long as the operating voltage requirements are met.
Q: Is IDT71V2576YS150PFG compatible with common microcontrollers? A: Yes, IDT71V2576YS150PFG is compatible with most microcontrollers that support SRAM interfacing.
Q: Can IDT71V2576YS150PFG be used in industrial applications? A: Yes, IDT71V2576YS150PFG is suitable for use in various industrial applications due to its reliability and robustness.
Q: Does IDT71V2576YS150PFG have any built-in error correction capabilities? A: No, IDT71V2576YS150PFG does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.
Q: Are there any specific temperature requirements for IDT71V2576YS150PFG? A: IDT71V2576YS150PFG is typically designed to operate within a temperature range of -40°C to +85°C, making it suitable for various environments.
Please note that the answers provided here are general and may vary depending on the specific application and requirements.