IDT, Integrated Device Technology Inc
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IDT71V3556S100BG
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IDT71V3556S100BG

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: Ball Grid Array (BGA)
  • Essence: Provides high-performance data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Organization: 256K x 36 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Clock Frequency: 100 MHz
  • Power Consumption: Low power consumption due to advanced CMOS technology
  • Temperature Range: -40°C to +85°C
  • Pin Count: 100 pins

Detailed Pin Configuration

The IDT71V3556S100BG has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. VDDQ
  35. GND
  36. A0
  37. A1
  38. A2
  39. A3
  40. A4
  41. A5
  42. A6
  43. A7
  44. A8
  45. A9
  46. A10
  47. A11
  48. A12
  49. A13
  50. A14
  51. A15
  52. A16
  53. A17
  54. A18
  55. A19
  56. A20
  57. A21
  58. A22
  59. A23
  60. A24
  61. A25
  62. A26
  63. A27
  64. A28
  65. A29
  66. A30
  67. A31
  68. CE#
  69. WE#
  70. OE#
  71. UB#
  72. LB#
  73. ZZ#
  74. CLK
  75. CLKEN#
  76. CKE#
  77. CS#
  78. RAS#
  79. CAS#
  80. WEN#
  81. OEN#
  82. BHE#
  83. BLE#
  84. BYTE#
  85. ADSP#
  86. ADV#
  87. LDQM#
  88. UDQM#
  89. DQS0#
  90. DQS0#
  91. DQS1#
  92. DQS1#
  93. DM0#
  94. DM1#
  95. VDD
  96. GND
  97. VDDQ
  98. VDDQ
  99. VDDQ
  100. VDDQ

Functional Features

  • High-speed operation: The IDT71V3556S100BG offers fast access times and clock frequencies, making it suitable for applications requiring quick data retrieval.
  • Low power consumption: Utilizing advanced CMOS technology, this memory device consumes minimal power, making it energy-efficient.
  • Synchronous operation: The device synchronizes data transfers with an external clock signal, ensuring reliable and accurate data transmission.
  • Large storage capacity: With a 256K x 36 bit organization, the IDT71V3556S100BG provides ample storage space for various data-intensive applications.

Advantages

  • High performance: The IDT71V3556S100BG offers fast access times and clock frequencies, enabling efficient data processing.
  • Low power consumption: The device's low power consumption makes it suitable for battery-powered devices and helps reduce overall energy costs.
  • Reliable data storage: The synchronous operation ensures accurate and reliable data storage and retrieval.
  • Ample storage capacity: With its large storage capacity, the IDT71V3556S100BG can accommodate extensive data requirements.

Disadvantages

  • Limited compatibility: The IDT71V3556S100BG may not be compatible with all systems or applications due to specific pin configuration and voltage requirements.
  • Cost: As a high-performance memory device,

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V3556S100BG v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V3556S100BG in technical solutions:

  1. Question: What is IDT71V3556S100BG?
    - Answer: IDT71V3556S100BG is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V3556S100BG?
    - Answer: The IDT71V3556S100BG has a capacity of 4 Megabytes (MB), which is equivalent to 32 Megabits (Mb).

  3. Question: What is the operating voltage range for IDT71V3556S100BG?
    - Answer: The operating voltage range for IDT71V3556S100BG is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71V3556S100BG?
    - Answer: The access time of IDT71V3556S100BG is 10 nanoseconds (ns), meaning it takes approximately 10 ns to read or write data.

  5. Question: Can IDT71V3556S100BG be used in industrial applications?
    - Answer: Yes, IDT71V3556S100BG is suitable for use in industrial applications due to its robust design and wide operating temperature range.

  6. Question: Does IDT71V3556S100BG support multiple chip enable signals?
    - Answer: Yes, IDT71V3556S100BG supports two chip enable signals (CE1 and CE2) which can be used for various memory banking configurations.

  7. Question: What is the pin configuration of IDT71V3556S100BG?
    - Answer: IDT71V3556S100BG has a 44-pin TSOP (Thin Small Outline Package) configuration.

  8. Question: Can IDT71V3556S100BG be used in battery-powered devices?
    - Answer: Yes, IDT71V3556S100BG is designed to operate efficiently in low-power applications, making it suitable for battery-powered devices.

  9. Question: Does IDT71V3556S100BG have built-in error correction capabilities?
    - Answer: No, IDT71V3556S100BG does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

  10. Question: Is IDT71V3556S100BG compatible with other SRAM devices?
    - Answer: Yes, IDT71V3556S100BG follows industry-standard pinouts and timing specifications, making it compatible with other SRAM devices from various manufacturers.

Please note that the answers provided here are general and may vary depending on specific application requirements. It is always recommended to refer to the official datasheet and consult with technical experts for accurate information.