IDT71V3556S133BG8

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
Package: Ball Grid Array (BGA)
Essence: Provides fast and reliable data storage and retrieval capabilities
Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

Part Number: IDT71V3556S133BG8
Organization: 256K x 36
Voltage Supply: 3.3V
Access Time: 133 MHz
Operating Temperature Range: -40°C to +85°C
Data Retention: Greater than 10 years
Power Consumption: Low power consumption during standby and active modes

Detailed Pin Configuration

The IDT71V3556S133BG8 has a total of 119 pins. The pin configuration is as follows:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
VSSQ
VDD
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
A72
A73
A74
A75
A76
A77
A78
A79
A80
A81
A82
VSS

Functional Features

High-speed operation: The IDT71V3556S133BG8 offers fast access times, making it suitable for applications requiring quick data retrieval.
Low power consumption: The memory device is designed to minimize power consumption during both standby and active modes, contributing to energy efficiency.
Synchronous operation: The SRAM operates synchronously with the system clock, ensuring reliable and synchronized data transfers.
Easy integration: The BGA package allows for easy integration into various electronic systems, providing flexibility in design.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low power consumption contributes to energy efficiency. - Synchronous operation ensures reliable data transfers. - Easy integration due to the BGA package.

Disadvantages: - Limited storage capacity compared to other memory devices

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V3556S133BG8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V3556S133BG8 in technical solutions:

Q: What is IDT71V3556S133BG8? A: IDT71V3556S133BG8 is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V3556S133BG8? A: The IDT71V3556S133BG8 has a capacity of 4 Megabits (Mb), which is equivalent to 512 Kilobytes (KB).
Q: What is the operating voltage range for IDT71V3556S133BG8? A: The operating voltage range for IDT71V3556S133BG8 is typically between 3.0V and 3.6V.
Q: What is the access time of IDT71V3556S133BG8? A: The access time of IDT71V3556S133BG8 is 133 nanoseconds (ns).
Q: Can IDT71V3556S133BG8 be used in battery-powered devices? A: Yes, IDT71V3556S133BG8 can be used in battery-powered devices as it operates within the typical voltage range of such devices.
Q: Is IDT71V3556S133BG8 compatible with other SRAM chips? A: Yes, IDT71V3556S133BG8 is compatible with other SRAM chips that have similar specifications and interface requirements.
Q: What is the package type of IDT71V3556S133BG8? A: IDT71V3556S133BG8 is available in a 44-pin TSOP (Thin Small Outline Package) form factor.
Q: Can IDT71V3556S133BG8 be used in high-speed applications? A: Yes, IDT71V3556S133BG8 can be used in high-speed applications as it has a relatively fast access time of 133 ns.
Q: Does IDT71V3556S133BG8 support multiple read and write operations simultaneously? A: No, IDT71V3556S133BG8 does not support multiple read and write operations simultaneously. It operates in a single-access mode.
Q: What are some typical applications of IDT71V3556S133BG8? A: IDT71V3556S133BG8 is commonly used in various technical solutions such as networking equipment, telecommunications devices, industrial control systems, and embedded systems where low-power and high-speed SRAM is required.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.