BCV27E6395HTMA1

Product Category: Integrated Circuit

Basic Information Overview: - Category: Transistor - Use: Amplification and switching of electronic signals - Characteristics: High voltage, high current capability, low power consumption - Package: SOT-23 - Essence: NPN Silicon Transistor - Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications: - Maximum Collector-Emitter Voltage: 45V - Maximum Collector Current: 100mA - Power Dissipation: 250mW - Transition Frequency: 250MHz - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1 (Emitter): Connects to the emitter region of the transistor - Pin 2 (Base): Connects to the base region of the transistor - Pin 3 (Collector): Connects to the collector region of the transistor

Functional Features: - High voltage and current capability - Low power consumption - Fast switching speed - Small package size for space-constrained applications

Advantages: - Suitable for high-frequency applications - Low power dissipation - Compact SOT-23 package

Disadvantages: - Limited maximum collector current - Limited maximum collector-emitter voltage

Working Principles: The BCV27E6395HTMA1 operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals, allowing for amplification or switching of electronic signals.

Detailed Application Field Plans: - Audio amplification circuits - Switching circuits in portable electronic devices - RF amplifier circuits in communication systems

Detailed and Complete Alternative Models: - BC847BPN - BC846BPN - BC848CPN - BC849CPN

This comprehensive entry provides an in-depth understanding of the BCV27E6395HTMA1, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.