IHW30N100R

Product Overview

The IHW30N100R is a power semiconductor device belonging to the category of Insulated Gate Bipolar Transistors (IGBTs). It is commonly used in high-power applications due to its unique characteristics, and it comes in a specific package with essential features. The IHW30N100R is known for its high efficiency and reliability, making it suitable for various industrial and commercial uses.

Category

The IHW30N100R falls under the category of Insulated Gate Bipolar Transistors (IGBTs), which are widely used in power electronics applications.

Use

This product is utilized in high-power electronic circuits and systems, such as motor drives, renewable energy systems, and industrial automation.

Characteristics

• High power handling capability
• Low conduction losses
• Fast switching speed
• Robust and reliable performance

Package

The IHW30N100R is typically packaged in a TO-247 package, providing thermal and electrical insulation for safe and efficient operation.

Essence

The essence of the IHW30N100R lies in its ability to handle high power levels while maintaining low losses and fast switching characteristics.

Packaging/Quantity

The IHW30N100R is usually supplied in standard packaging, with quantities varying based on the supplier and customer requirements.

Specifications

• Voltage Rating: 1000V
• Current Rating: 30A
• Maximum Operating Temperature: 150°C
• Gate-Emitter Voltage: ±20V
• Collector-Emitter Saturation Voltage: 1.8V

Detailed Pin Configuration

The IHW30N100R features a standard pin configuration with terminals for gate, collector, and emitter connections. The pinout is as follows: 1. Gate (G) 2. Collector (C) 3. Emitter (E)

Functional Features

• High voltage and current handling capacity
• Low saturation voltage
• Fast switching speed
• Built-in protection features

Advantages and Disadvantages

Advantages

• High power handling capability
• Low conduction losses
• Fast switching speed
• Reliable performance in demanding applications

Disadvantages

• Higher cost compared to traditional power transistors
• Sensitive to overvoltage and overcurrent conditions

Working Principles

The IHW30N100R operates based on the principles of controlling the flow of current between the collector and emitter terminals using the gate signal. By modulating the gate voltage, the device can efficiently regulate the power flow through the circuit.

Detailed Application Field Plans

The IHW30N100R is well-suited for the following application fields: - Motor drives for electric vehicles and industrial machinery - Renewable energy systems such as solar inverters and wind turbine converters - Uninterruptible Power Supplies (UPS) and power conditioning equipment - Induction heating and welding systems

Detailed and Complete Alternative Models

Some alternative models to the IHW30N100R include: - IRGP4063DPBF - FGA25N120ANTD - IXGH40N60C2D1

In conclusion, the IHW30N100R is a high-performance IGBT designed for demanding power electronics applications, offering efficient power handling and fast switching characteristics.

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