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IPB120N06S402ATMA1
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IPB120N06S402ATMA1

Product Overview

Category

The IPB120N06S402ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power loss

Package

The IPB120N06S402ATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 120A
  • On-State Resistance (RDS(on)): 4.2mΩ
  • Power Dissipation (PD): 300W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB120N06S402ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • Enhanced thermal performance
  • High input impedance
  • Robust avalanche energy handling capability

Advantages and Disadvantages

Advantages

  • High current-carrying capacity
  • Low on-state resistance
  • Fast switching speed
  • Improved thermal characteristics

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The IPB120N06S402ATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switch-mode power supplies - Motor control circuits - Automotive electronics - Industrial automation systems - Renewable energy applications

Detailed and Complete Alternative Models

Some alternative models to the IPB120N06S402ATMA1 include: - IRF3205 - FDP8878 - STP80NF55-06

In conclusion, the IPB120N06S402ATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of electronic applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPB120N06S402ATMA1 v technických řešeních

  1. What is the maximum drain-source voltage of IPB120N06S402ATMA1?

    • The maximum drain-source voltage of IPB120N06S402ATMA1 is 60V.

  2. What is the continuous drain current rating of IPB120N06S402ATMA1?

    • The continuous drain current rating of IPB120N06S402ATMA1 is 120A.

  3. What is the on-resistance of IPB120N06S402ATMA1?

    • The on-resistance of IPB120N06S402ATMA1 is typically 6.4mΩ at Vgs = 10V.

  4. Can IPB120N06S402ATMA1 be used in automotive applications?

    • Yes, IPB120N06S402ATMA1 is suitable for automotive applications.

  5. What is the operating temperature range of IPB120N06S402ATMA1?

    • The operating temperature range of IPB120N06S402ATMA1 is -55°C to 175°C.

  6. Does IPB120N06S402ATMA1 have built-in protection features?

    • Yes, IPB120N06S402ATMA1 has built-in overcurrent and thermal protection.

  7. Is IPB120N06S402ATMA1 RoHS compliant?

    • Yes, IPB120N06S402ATMA1 is RoHS compliant.

  8. What is the gate threshold voltage of IPB120N06S402ATMA1?

    • The gate threshold voltage of IPB120N06S402ATMA1 is typically 2V.

  9. Can IPB120N06S402ATMA1 be used in high-power applications?

    • Yes, IPB120N06S402ATMA1 is designed for high-power applications.

  10. What package type does IPB120N06S402ATMA1 come in?

    • IPB120N06S402ATMA1 is available in a TO-263-3 package.