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IPB120N06S4H1ATMA1
Product Overview
Category
The IPB120N06S4H1ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power
- Enhanced thermal performance
Package
The IPB120N06S4H1ATMA1 is typically available in a TO-263 package.
Essence
This power MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly supplied in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 120A
- On-State Resistance (RDS(on)): 6mΩ
- Power Dissipation (PD): 300W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB120N06S4H1ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low conduction losses
- High efficiency
- Reliable and robust performance
- Suitable for high-frequency applications
- Enhanced thermal management capabilities
Advantages and Disadvantages
Advantages
- High current-handling capacity
- Low on-state resistance leading to reduced power dissipation
- Fast switching speed for improved efficiency
- Enhanced thermal performance for reliability
Disadvantages
- Higher cost compared to standard MOSFETs
- Requires careful handling due to its sensitivity to static electricity
Working Principles
The IPB120N06S4H1ATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters the conducting state, allowing current to flow through it.
Detailed Application Field Plans
The IPB120N06S4H1ATMA1 is widely used in the following applications: - Switched-mode power supplies - Motor control systems - Automotive electronics - Industrial automation - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPB120N06S4H1ATMA1 include: - IRF3205 - FDP8878 - STP80NF03L - AUIRF3710 - IXFH120N65X2
In conclusion, the IPB120N06S4H1ATMA1 power MOSFET offers high-performance characteristics suitable for demanding power management applications across various industries.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPB120N06S4H1ATMA1 v technických řešeních
What is the maximum drain-source voltage of IPB120N06S4H1ATMA1?
- The maximum drain-source voltage of IPB120N06S4H1ATMA1 is 60V.
What is the continuous drain current rating of IPB120N06S4H1ATMA1?
- The continuous drain current rating of IPB120N06S4H1ATMA1 is 120A.
What is the on-resistance of IPB120N06S4H1ATMA1?
- The on-resistance of IPB120N06S4H1ATMA1 is typically 6mΩ at Vgs=10V.
Can IPB120N06S4H1ATMA1 be used in automotive applications?
- Yes, IPB120N06S4H1ATMA1 is suitable for automotive applications.
What is the operating temperature range of IPB120N06S4H1ATMA1?
- IPB120N06S4H1ATMA1 has an operating temperature range of -55°C to 175°C.
Does IPB120N06S4H1ATMA1 have built-in ESD protection?
- Yes, IPB120N06S4H1ATMA1 features built-in ESD protection.
What type of package does IPB120N06S4H1ATMA1 come in?
- IPB120N06S4H1ATMA1 comes in a TO-263-7 package.
Is IPB120N06S4H1ATMA1 suitable for high-frequency switching applications?
- Yes, IPB120N06S4H1ATMA1 is suitable for high-frequency switching applications.
What gate-source voltage is required to fully enhance IPB120N06S4H1ATMA1?
- A gate-source voltage of 10V is required to fully enhance IPB120N06S4H1ATMA1.
Does IPB120N06S4H1ATMA1 have a low thermal resistance?
- Yes, IPB120N06S4H1ATMA1 has a low thermal resistance for efficient heat dissipation.