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IPB80N04S2H4ATMA2
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IPB80N04S2H4ATMA2

Introduction

The IPB80N04S2H4ATMA2 is a power MOSFET belonging to the category of electronic components. It is widely used in various applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High current capability, low on-resistance, fast switching speed
  • Package: TO263-3 (D2PAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Typically packaged in reels of 800 units

Specifications

  • Voltage Rating: 40V
  • Current Rating: 80A
  • On-Resistance: 4mΩ
  • Gate Charge: 60nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB80N04S2H4ATMA2 follows the standard pin configuration for a D2PAK package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient power control
  • High current capability for demanding applications

Advantages and Disadvantages

Advantages: - High current handling capacity - Low on-resistance for reduced power losses - Fast switching speed for improved efficiency

Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles

The IPB80N04S2H4ATMA2 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals. When the gate voltage is applied, the MOSFET allows current to pass through, enabling power switching functions.

Detailed Application Field Plans

The IPB80N04S2H4ATMA2 finds extensive use in various applications, including: - Switching power supplies - Motor control systems - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

  1. IPB80N04S2-07: Similar specifications with enhanced thermal performance
  2. IPB80N04S2L-08: Lower on-resistance variant for higher efficiency

In conclusion, the IPB80N04S2H4ATMA2 power MOSFET offers high-performance characteristics suitable for diverse power switching applications, making it a preferred choice in the electronics industry.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPB80N04S2H4ATMA2 v technických řešeních

  1. What is the maximum drain-source voltage of IPB80N04S2H4ATMA2?

    • The maximum drain-source voltage of IPB80N04S2H4ATMA2 is 40V.

  2. What is the continuous drain current rating of IPB80N04S2H4ATMA2?

    • The continuous drain current rating of IPB80N04S2H4ATMA2 is 80A.

  3. What is the on-resistance of IPB80N04S2H4ATMA2?

    • The on-resistance of IPB80N04S2H4ATMA2 is typically 4mΩ at Vgs = 10V.

  4. What is the gate threshold voltage of IPB80N04S2H4ATMA2?

    • The gate threshold voltage of IPB80N04S2H4ATMA2 is typically 2V.

  5. What is the power dissipation capability of IPB80N04S2H4ATMA2?

    • The power dissipation capability of IPB80N04S2H4ATMA2 is 300W.

  6. Is IPB80N04S2H4ATMA2 suitable for automotive applications?

    • Yes, IPB80N04S2H4ATMA2 is designed for automotive applications and complies with AEC-Q101 standards.

  7. What is the operating temperature range of IPB80N04S2H4ATMA2?

    • The operating temperature range of IPB80N04S2H4ATMA2 is -55°C to 175°C.

  8. Does IPB80N04S2H4ATMA2 have built-in ESD protection?

    • Yes, IPB80N04S2H4ATMA2 features built-in ESD protection.

  9. Can IPB80N04S2H4ATMA2 be used in high-frequency switching applications?

    • Yes, IPB80N04S2H4ATMA2 is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.

  10. What package type does IPB80N04S2H4ATMA2 come in?

    • IPB80N04S2H4ATMA2 is available in a TO-263-7 package.