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IPB80N06S2L07ATMA1
Product Overview
Category
The IPB80N06S2L07ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
- Enhanced thermal performance
Package
The IPB80N06S2L07ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 80A
- On-State Resistance (RDS(on)): 6.7mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 100nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB80N06S2L07ATMA1 follows the standard pin configuration for a power MOSFET: - Pin 1: Gate (G) - Pin 2: Drain (D) - Pin 3: Source (S)
Functional Features
- High current-carrying capability
- Low conduction losses
- Fast switching characteristics
- Robust thermal performance
Advantages
- Efficient power handling
- Reduced heat dissipation
- Enhanced system reliability
- Suitable for high-frequency switching applications
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to electrostatic discharge (ESD) due to smaller feature sizes
Working Principles
The IPB80N06S2L07ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity within the semiconductor material.
Detailed Application Field Plans
The IPB80N06S2L07ATMA1 is widely used in: - Switch-mode power supplies - Motor control systems - Automotive electronics - Industrial automation - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPB80N06S2L07ATMA1 include: - IRF840 - FDP8878 - STP80NF03L
Note: The provided alternatives may vary based on specific application requirements and compatibility.
This comprehensive entry provides an in-depth understanding of the IPB80N06S2L07ATMA1, covering its basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPB80N06S2L07ATMA1 v technických řešeních
What is the maximum drain-source voltage of IPB80N06S2L07ATMA1?
- The maximum drain-source voltage of IPB80N06S2L07ATMA1 is 60V.
What is the continuous drain current rating of IPB80N06S2L07ATMA1?
- The continuous drain current rating of IPB80N06S2L07ATMA1 is 80A.
What is the on-state resistance (RDS(on)) of IPB80N06S2L07ATMA1?
- The on-state resistance (RDS(on)) of IPB80N06S2L07ATMA1 is typically 8.7mΩ at VGS = 10V.
What is the gate threshold voltage of IPB80N06S2L07ATMA1?
- The gate threshold voltage of IPB80N06S2L07ATMA1 is typically 2.5V.
What is the power dissipation of IPB80N06S2L07ATMA1?
- The power dissipation of IPB80N06S2L07ATMA1 is 300W.
What are the typical applications for IPB80N06S2L07ATMA1?
- IPB80N06S2L07ATMA1 is commonly used in applications such as motor control, power supplies, and DC-DC converters.
What is the operating temperature range of IPB80N06S2L07ATMA1?
- The operating temperature range of IPB80N06S2L07ATMA1 is -55°C to 175°C.
Is IPB80N06S2L07ATMA1 RoHS compliant?
- Yes, IPB80N06S2L07ATMA1 is RoHS compliant.
What is the package type of IPB80N06S2L07ATMA1?
- IPB80N06S2L07ATMA1 is available in a TO-263-7 package.
Does IPB80N06S2L07ATMA1 have built-in ESD protection?
- Yes, IPB80N06S2L07ATMA1 features built-in ESD protection.